PD - 96321
AUTOMOTIVE GRADE
AUIRF2907ZS-7P
HEXFET® Power MOSFET
Features
D
V(BR)DSS
75V
3.0m
l Advanced Process Technology
l UltraLowOn-Resistance
l 175°COperatingTemperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free,RoHSCompliant
l Automotive Qualified *
RDS(on) typ.
Ω
G
max.
3.8m
Ω
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID (Silicon Limited)
180A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombinetomake
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
S
S
S
S
S
G
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicatedinthespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiods
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Max.
180
120
700
300
Units
A
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
DM
P
@TC = 25°C
W
Maximum Power Dissipation
D
Linear Derating Factor
2.0
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
160
410
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
STG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
RθJC
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθCS
0.50
–––
°C/W
Rθ
JA
Junction-to-Ambient
RθJA
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10