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AUIRF2907ZS-7P PDF预览

AUIRF2907ZS-7P

更新时间： 2024-09-13 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 289K
描述
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7

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AUIRF2907ZS-7P 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.66
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：410 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：75 V最大漏极电流 (Abs) (ID)：180 A
最大漏极电流 (ID)：180 A最大漏源导通电阻：0.0038 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：700 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2907ZS-7P 数据手册

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PD - 96321  
AUTOMOTIVE GRADE  
AUIRF2907ZS-7P  
HEXFET® Power MOSFET  
Features  
D
V(BR)DSS  
75V  
3.0m  
l Advanced Process Technology  
l UltraLowOn-Resistance  
l 175°COperatingTemperature  
l Fast Switching  
l Repetitive Avalanche Allowed up to Tjmax  
l Lead-Free,RoHSCompliant  
l Automotive Qualified *  
RDS(on) typ.  
Ω
G
max.  
3.8m  
Ω
S
S (Pin 2, 3, 5, 6, 7)  
G (Pin 1)  
ID (Silicon Limited)  
180A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitiveavalancherating.Thesefeaturescombinetomake  
this design an extremely efficient and reliable device for use  
in Automotive applications and a wide variety of other  
applications.  
S
S
S
S
S
G
D2Pak 7 Pin  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
These are stress ratings only; and functional operation of the device at these or any other condition beyond those  
indicatedinthespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiods  
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board  
mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Absolute Maximum Ratings  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
Max.  
180  
120  
700  
300  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
2.0  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
160  
410  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
STG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
RθJC  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
RθCS  
0.50  
–––  
°C/W  
Rθ  
JA  
Junction-to-Ambient  
RθJA  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...13

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AUIRF2907ZS-7P 替代型号

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