Datasheet > AUIRF2903ZS

AUIRF2903ZS

更新时间： 2024-11-30 21:10:27

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	700K
描述
Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

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技术参数
数据手册
替代型号

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AUIRF2903ZS 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.26
其他特性：	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	雪崩能效等级（Eas）：	231 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	160 A
最大漏极电流 (ID)：	160 A	最大漏源导通电阻：	0.0024 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	231 W	最大脉冲漏极电流 (IDM)：	1020 A
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AUIRF2903ZS 数据手册

AUIRF2903ZS

AUIRF2903ZL

AUTOMOTIVE GRADE

Features

V_DSS

30V

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

R_DS(on)typ.

1.9m

2.4m

235A

160A

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use in

Automotive applications and wide variety of other applications.

D²Pak

AUIRF2903ZS

TO-262

AUIRF2903ZL

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Tube

Orderable Part Number

Quantity

AUIRF2903ZL

AUIRF2903ZS

TO-262

D²-Pak

AUIRF2903ZL

AUIRF2903ZS

AUIRF2903ZSTRL

Tube

Tape and Reel Left

800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

235

I_D@ T_C= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

166

160

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

1020

231

P_D@T_C= 25°C

W/°C

1.54

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 20

231

E_AS(tested)

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

820

I_AR

See Fig.15,16, 12a, 12b

E_AR

T_J

Repetitive Avalanche Energy 

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

-55 to + 175

300

T_STG

°C

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

0.65

Units

R_JC

R_JA

Junction-to-Ambient

°C/W

Junction-to-Ambient ( PCB Mount, steady state) 

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-9-30

12 3 4 5 6 7...12

中文翻译

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AUIRF2903ZS 替代型号

型号	品牌	替代类型	描述	数据表
IRF2903ZSTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Me
IRF2903ZSPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET
AUIRF2903Z	INFINEON	功能相似	AUTOMOTIVE GRADE

与AUIRF2903ZS相关器件

型号	品牌	获取价格	描述	数据表
AUIRF2903ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
AUIRF2903ZSTRR	INFINEON	获取价格	暂无描述
AUIRF2905ZSTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF2905ZSTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF2907Z	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRF2907ZS-7P	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, M
AUIRF2907ZS7PTL	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, M
AUIRF2907ZS7PTR	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, M
AUIRF3004WL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRF3007	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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