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AUIRF2903ZS PDF预览

AUIRF2903ZS

更新时间： 2024-01-15 00:45:28
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 700K
描述
Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

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中文翻译

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AUIRF2903ZS 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.26
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级（Eas）：231 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：160 A
最大漏极电流 (ID)：160 A最大漏源导通电阻：0.0024 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：231 W最大脉冲漏极电流 (IDM)：1020 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2903ZS 数据手册

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AUIRF2903ZS  
AUIRF2903ZL  
AUTOMOTIVE GRADE  
Features  
VDSS  
30V  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
1.9m  
2.4m  
235A  
160A  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
D
D
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per silicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating. These features combine to make  
this design an extremely efficient and reliable device for use in  
Automotive applications and wide variety of other applications.  
S
S
D
G
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Tube  
Orderable Part Number  
Quantity  
50  
AUIRF2903ZL  
AUIRF2903ZS  
TO-262  
D2-Pak  
AUIRF2903ZL  
AUIRF2903ZS  
AUIRF2903ZSTRL  
Tube  
Tape and Reel Left  
50  
800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
235  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
166  
A
160  
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
1020  
231  
PD @TC = 25°C  
W
W/°C  
V
1.54  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
231  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
820  
IAR  
See Fig.15,16, 12a, 12b  
A
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 175  
300  
TSTG  
°C  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
–––  
Max.  
0.65  
62  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient  
°C/W  
Junction-to-Ambient ( PCB Mount, steady state)   
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-9-30  
1234567...12

中文翻译

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AUIRF2903ZS 替代型号

型号 品牌 替代类型 描述 数据表
IRF2903ZSTRLPBF INFINEON

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