AUIRF2804S

更新时间： 2024-02-27 22:12:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
15页	377K
描述
HEXFET® Power MOSFET

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中文翻译

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数据手册
替代型号

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AUIRF2804S 数据手册

PD-96290

AUIRF2804

AUIRF2804S

AUTOMOTIVE GRADE

AUIRF2804L

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_(BR)DSS

40V

1.5m

R_DS(on)typ.

Ω

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

max.

2.0mΩ

270A

195A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D²Pak

TO-262

TO-220AB

AUIRF2804

AUIRF2804S

AUIRF2804L

Gate

Drain

Source

AbsoluteMaximumRatings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

270

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

190

195

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

1080

300

Pulsed Drain Current

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.0

± 20

W/°C

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

540

1160

E_AS(tested)

Avalanche Current

I_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.50

–––

Units

Junction-to-Case

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/19/10

12 3 4 5 6 7...15

中文翻译

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AUIRF2804S 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF2804STRL	INFINEON	类似代替	Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, M

与AUIRF2804S相关器件

型号	品牌	获取价格	描述	数据表
AUIRF2804S-7P	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF2804S-7PS-7P	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804S-7TRL	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRL	INFINEON	获取价格	Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRL7P	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRR7P	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF2804WL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF2805	INFINEON	获取价格	ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF2805L	INFINEON	获取价格	Advanced Planar Technology
AUIRF2805S	INFINEON	获取价格	Advanced Planar Technology

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