AUIRF2804WL

更新时间： 2024-01-05 16:47:50

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
15页	377K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRF2804WL 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	16 weeks	风险等级：	5.28
配置：	Single	最大漏极电流 (Abs) (ID)：	240 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	湿度敏感等级：	1
最高工作温度：	175 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	300 W
子类别：	FET General Purpose Power	表面贴装：	NO
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AUIRF2804WL 数据手册

PD-96290

AUIRF2804

AUIRF2804S

AUTOMOTIVE GRADE

AUIRF2804L

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_(BR)DSS

40V

1.5m

R_DS(on)typ.

Ω

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

max.

2.0mΩ

270A

195A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D²Pak

TO-262

TO-220AB

AUIRF2804

AUIRF2804S

AUIRF2804L

Gate

Drain

Source

AbsoluteMaximumRatings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

270

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

190

195

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

1080

300

Pulsed Drain Current

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.0

± 20

W/°C

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

540

1160

E_AS(tested)

Avalanche Current

I_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.50

–––

Units

Junction-to-Case

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/19/10

12 3 4 5 6 7...15

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与AUIRF2804WL相关器件

型号	品牌	获取价格	描述	数据表
AUIRF2805	INFINEON	获取价格	ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF2805L	INFINEON	获取价格	Advanced Planar Technology
AUIRF2805S	INFINEON	获取价格	Advanced Planar Technology
AUIRF2805STRL	INFINEON	获取价格	Advanced Planar Technology
AUIRF2805STRR	INFINEON	获取价格	Advanced Planar Technology
AUIRF2807	INFINEON	获取价格	Advanced Planar Technology, Low On-Resistance
AUIRF2903Z	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRF2903ZS	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
AUIRF2903ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
AUIRF2903ZSTRR	INFINEON	获取价格	暂无描述

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