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AUIRF2907Z

更新时间： 2024-02-29 20:07:09
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 288K
描述
HEXFET? Power MOSFET

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中文翻译

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AUIRF2907Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：690 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：75 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.0045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：680 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2907Z 数据手册

 浏览型号AUIRF2907Z的Datasheet PDF文件第2页浏览型号AUIRF2907Z的Datasheet PDF文件第3页浏览型号AUIRF2907Z的Datasheet PDF文件第4页浏览型号AUIRF2907Z的Datasheet PDF文件第5页浏览型号AUIRF2907Z的Datasheet PDF文件第6页浏览型号AUIRF2907Z的Datasheet PDF文件第7页 
PD - 97545  
AUTOMOTIVE GRADE  
AUIRF2907Z  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
Advanced Process Technology  
D
V(BR)DSS  
75V  
4.5m  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
170A  
75A  
S
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest process-  
ing techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speedandimprovedrepetitiveavalancherating. These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
S
D
G
TO-220AB  
AUIRF2907Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
170  
120  
75  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
680  
300  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
2.0  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
270  
690  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
STG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Typ.  
–––  
Max.  
0.50  
–––  
Units  
Parameter  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
62  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...12

中文翻译

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AUIRF2907Z 替代型号

型号 品牌 替代类型 描述 数据表
IRF2907ZPBF INFINEON

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STP160N75F3 STMICROELECTRONICS

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IRF2907ZLPBF INFINEON

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