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AUIRF2804S-7TRL PDF预览

AUIRF2804S-7TRL

更新时间： 2024-11-30 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 355K
描述
Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, D2PAK-7/6

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AUIRF2804S-7TRL 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code：compliant风险等级：5.66
其他特性：ULTRA LOW RESISTANCE雪崩能效等级（Eas）：630 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (ID)：240 A
最大漏源导通电阻：0.0016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263CBJESD-30 代码：R-PSSO-G6
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：1360 A
参考标准：AEC-Q101表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2804S-7TRL 数据手册

 浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第2页浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第3页浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第4页浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第5页浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第6页浏览型号AUIRF2804S-7TRL的Datasheet PDF文件第7页 
AUIRF2804S-7P  
AUTOMOTIVE GRADE  
Features  
HEXFET® Power MOSFET  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
40V  
RDS(on) max.  
ID (Silicon Limited)  
1.6m  
320A  
ID (Package Limited)  
240A  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a  
175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base Part Number  
Package Type  
Complete Part Number  
Form  
Tube  
Quantity  
50  
AUIRF2804S-7P  
AUIRF2804S-7TRL  
AUIRF2804S-7P  
D2Pak-7PIN  
Tape and Reel Left  
800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
320  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
230  
240  
A
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
1360  
330  
2.2  
PD @TC = 25°C  
W
W/°C  
V
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
630  
mJ  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
1050  
See Fig.12a,12b,15,16  
A
EAR  
Repetitive Avalanche Energy   
mJ  
TJ  
TSTG  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 175  
300  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
–––  
0.50  
RJC  
RCS  
RJA  
RJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
–––  
–––  
62  
°C/W  
Junction-to-Ambient (PCB Mount, steady state)   
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-11  
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