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AUIRF2804STRL PDF预览

AUIRF2804STRL

更新时间： 2024-01-27 21:27:29
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
15页 290K
描述
Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3

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AUIRF2804STRL 数据手册

 浏览型号AUIRF2804STRL的Datasheet PDF文件第2页浏览型号AUIRF2804STRL的Datasheet PDF文件第3页浏览型号AUIRF2804STRL的Datasheet PDF文件第4页浏览型号AUIRF2804STRL的Datasheet PDF文件第5页浏览型号AUIRF2804STRL的Datasheet PDF文件第6页浏览型号AUIRF2804STRL的Datasheet PDF文件第7页 
PD-96290A  
AUIRF2804  
AUIRF2804S  
AUTOMOTIVE GRADE  
AUIRF2804L  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
V(BR)DSS  
40V  
D
RDS(on) typ.  
1.5m  
Ω
Ω
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
max. 2.0m  
G
ID (Silicon Limited) 270A  
ID (Package Limited) 195A  
S
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
D
D
D
S
D
S
S
D
G
D
G
G
D2Pak  
TO-262  
TO-220AB  
AUIRF2804  
AUIRF2804S  
AUIRF2804L  
G
D
S
Gate  
Drain  
Source  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
270  
Units  
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
190  
A
195  
(P ackage Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
1080  
300  
DM  
P
D
@TC = 25°C  
Maximum Power Dissipation  
W
Linear Derating Factor  
Gate-to-Source Voltage  
2.0  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS  
540  
1160  
mJ  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
T
Operating Junction and  
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
0.50  
–––  
–––  
Max.  
0.50  
–––  
62  
Units  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
Rθ  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
°C/W  
Junction-to-Ambient  
Junction-to-Ambient (PCB Mount, steady state)  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
03/13/12  
1234567...15

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AUIRF2804STRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF2804S INFINEON

类似代替

 HEXFET® Power MOSFET

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