Datasheet > ASDM60N80G

ASDM60N80G

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1596K
描述
TO-263

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ASDM60N80G 数据手册

ASDM60N80G

60V N-Channel MOSFET

General Features

Product Summary

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

BVDSS

6.4

RDS(on),Typ.@VGS=10V

mΩ

Application

● Power switching application

● LED backlighting

● Uninterruptible power supply

TO-263

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

250

Maximum Power Dissipation

Debating factor

P_D

0.57

W/℃

(Note 5)

Single pulse avalanche energy

E_AS

125

Operating Junction and Storage Temperature Range

-55 To 175

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJA

R_θJC

℃/W

0.76

www.ascendsemi.com

0755-86970486

Sep 2021 Version1.0

1/7

12 3 4 5 6 7

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