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ASDM80R032NQ PDF预览

ASDM80R032NQ

更新时间: 2024-11-02 17:15:19
品牌 Logo 应用领域
安森德 - ASDsemi 光电二极管
页数 文件大小 规格书
8页 412K
描述
PDFN5*6-8

ASDM80R032NQ 数据手册

 浏览型号ASDM80R032NQ的Datasheet PDF文件第2页浏览型号ASDM80R032NQ的Datasheet PDF文件第3页浏览型号ASDM80R032NQ的Datasheet PDF文件第4页浏览型号ASDM80R032NQ的Datasheet PDF文件第5页浏览型号ASDM80R032NQ的Datasheet PDF文件第6页浏览型号ASDM80R032NQ的Datasheet PDF文件第7页 
ASDM80R032NQ  
80V N-Channel MOSFET  
Feature  
Product Summary  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
V DS  
80  
V
m  
A
R DS(on),TYP@ VGS=10 V  
I D  
3.2  
100  
Application  
Automotive applications  
Hard switched and high frequency circuits  
Uninterruptible power supply  
D
D D D  
D
S
G
G
S S S  
DFN5*6-8  
Absolute Maximum Ratings at Tj=25(unless otherwise specified)  
Conditions  
Parameter  
Symbol  
Value  
100  
Unit  
TC =25℃  
TC =100℃  
Continuous Drain Current (Silicon Limited)  
A
ID  
80  
Drain to Source Voltage  
Gate to Source Voltage  
-
-
-
V
V
VDS  
VGS  
80  
+20/-20  
400  
Pulsed Drain Current  
A
IDM  
Avalanche Energy, Single Pulse  
Power Dissipation  
mJ  
W
EAS  
L=0.3mH, T =25℃  
1000  
200  
C
PD  
TC=25℃  
-
-50 to150  
Operating and Storage Temperature  
TJ, Tstg  
Absolute Maximum Ratings  
Parameter  
Symbol  
Max  
Unit  
Thermal Resistance Junction-Case  
0.68  
/W  
RθJC  
NOV 2018 Version1.0  
1/8  
Ascend Semicondutor Co.,Ltd  

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