Datasheet > ASDM80R032NQ

ASDM80R032NQ

更新时间： 2024-05-23 22:22:06

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
8页	412K
描述
PDFN5*6-8

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ASDM80R032NQ 数据手册

ASDM80R032NQ

80V N-Channel MOSFET

Feature

Product Summary

◇High density cell design for ultra low Rdson

◇Fully characterized avalanche voltage and current

◇Good stability and uniformity with high E_AS

◇Excellent package for good heat dissipation

◇Special process technology for high ESD capability

V DS

mΩ

R DS(on),TYP@ VGS=10 V

I D

3.2

100

Application

◇Automotive applications

◇Hard switched and high frequency circuits

◇Uninterruptible power supply

D D D

S S S

DFN5*6-8

Absolute Maximum Ratings at T_j=25℃ (unless otherwise specified)

Conditions

Parameter

Symbol

Value

100

Unit

T_C=25℃

T_C=100℃

Continuous Drain Current (Silicon Limited)

I_D

Drain to Source Voltage

Gate to Source Voltage

V_DS

V_GS

+20/-20

400

Pulsed Drain Current

I_DM

Avalanche Energy, Single Pulse

Power Dissipation

℃

E_AS

L=0.3mH, T =25℃

1000

200

P_D

T_C=25℃

-50 to150

Operating and Storage Temperature

T_J, T_stg

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Thermal Resistance Junction-Case

0.68

℃/W

R_θJC

NOV 2018 Version1.0

1/8

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7 8

中文翻译

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