Datasheet > ASDM80R055NTD

ASDM80R055NTD

更新时间： 2024-11-02 17:15:39

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
10页	432K
描述
PDFN3*3-8

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中文翻译

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ASDM80R055NTD 数据手册

ASDM80R055NTD

80V N-Channel MOSFET

Features

Product Summary

•ꢀOptimizedꢀforꢀchargers

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

•ꢀN-channel,ꢀLogicꢀlevel

•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀIdealꢀforꢀhigh-frequencyꢀswitching

V_DSS

mΩ

5.4

R_{DS(ON)-Typ@VGS=10V}

I_D

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

DFN3*3-8

ꢀMaximumꢀratings at TA=25ꢀ°C, unless otherwise specified

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

Continuous drain current

I_D

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

V_GS=10ꢀV,ꢀT_A=25ꢀ°C,ꢀR_thJAꢀ=60K/W¹⁾

Pulsed drain current²⁾

Avalanche energy, single pulse³⁾

I_D,pulse

E_AS

160

T_C=25ꢀ°C

I_D=20ꢀA,ꢀR_GS=25ꢀΩ

Gate source voltage

V_GS

-20

2.1

T_C=25ꢀ°C

Power dissipation

P_tot

T_A=25ꢀ°C,ꢀR_thJA=60ꢀK/W¹⁾

IEC climatic category;

DIN IEC 68-1: 55/150/56

Operating and storage temperature

T_j,ꢀT_stg

-55

150

°C

ꢀThermalꢀcharacteristics

Values

Typ.

1.6

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

R_thJA

2.7

K/W

Device on PCB,

minimal footprint

Device on PCB,

R_thJA

K/W

6 cm²cooling area¹⁾

Ascend Semicondutor Co.,Ltd

DEC 2018 Version1.0

1/10

12 3 4 5 6 7...10

中文翻译

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