Datasheet > ASDM9GN65TE

ASDM9GN65TE

更新时间： 2024-05-23 22:23:04

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
12页	1826K
描述
DFN8*8

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中文翻译

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数据手册

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ASDM9GN65TE 数据手册

ASDM9GN65TE

650V N-Channel power MOSFET

Features

• Easy to use, compatible with standard gate

• Low Q_rr, no free-wheeling diode required

• Excellent Q_gx R_DS(on)product (FOM)

Product Summary

drivers

VDS

650

230

RDS(on),Typ @VGS =8V

mΩ

• Low switching loss

• RoHS compliant and Halogen-free

Application

• High efficiency power supplies

• High efficiency USB PD adapters

Other consumer electronics

•

Maximum ratings, at T_C=25 °C, unless otherwise specified

Symbol

Parameter

Limit Value

Unit

Continuous drain current @T_C=25°C

Continuous drain current @T_C=100°C

Pulsed drain current @T_C=25°C (pulse width: 10us)

Pulsed drain current @T_C=150°C (pulse width: 10us)

Drain to source voltage (T_J= -55°C to 150°C )

Transient drain to source voltage ^a

I_D

I_DM

V_DSS

650

V_TDSS

V_GSS

P_D

800

±20

Gate to source voltage

°C

Maximum power dissipation @T_C=25°C

T_C

-55 to 150

260

Case

Operating temperature

Junction

T_J

T_S

Storage temperature

T_CSOLD

Soldering peak temperature

Thermal Resistance

Symbol

Parameter

Typical

Unit

RΘJC

Junction-to-case

Junction-to-ambient ^b

3.3

°C /W

RΘJA

°C /W

Notes:

Off-state spike duty cycle < 0.01, spike duration < 2us

Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm

copper area and 70µm thickness)

www.ascendsemi.com

0755-86970486

Sep 2022 Version1.0

1/12

12 3 4 5 6 7...12

中文翻译

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