Datasheet > ASDM85R028NG

ASDM85R028NG

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	1868K
描述
TO-263

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中文翻译

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数据手册

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ASDM85R028NG 数据手册

ASDM85R028NG

85V N-Channel MOSFET

Features

Product Summary

l Surface-mounted package

l Super Trench

VDS

3.2

200

Ω

RDS(on),Typ @

VGS

=10V

Advanced trench cell design

Applications

BMS appliances

Power appliances

l High power inverter system

TO-263 top view

Limiting Values

Symbol

Parameter

Conditions

Min Max Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

Drain Current ( DC )

T_C= 25

℃

V_GS

±20

200

800

156

150

200

1900

62.5

0.8

T_C= 25 ℃

I_D*^,***

T_C= 25 ℃, V_GS= 10 V

T_C= 25

I_DM*^,**^,*** Drain Current ( Pulsed )

P_tot*

T_stg

T_J

Drain power dissipation

Storage Temperature

℃

-55

℃

Junction Temperature

Continuous-Source Current

℃

I_S

T_C= 25 ℃

EAS*

Single Pulsed Avalanche Energy VDD=50V , L=0.5mH

Thermal Resistance- Junction to Ambient

Thermal Resistance- Junction to Case

R_θJA

℃

R_θJC

Notes：

Surface Mounted on 1 in²pad area, t  10sec

** Pulse width  300 s, duty cycle  2 %

*** Limited by bonding wire

www.ascendsemi.com

0755-86970486

DEC 2020 Version1.1

1/8

12 3 4 5 6 7 8

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