Datasheet > AO4486

AO4486

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	624K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:4.2A;Vgs(th)(V):±20;漏源导通电阻:79mΩ@10V

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AO4486 数据手册

UMW

AO4486

N-Channel MOSFET

General Description

The AO4486 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON).This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

Product Summary

V_DS(V) = 100V

I_D= 4.2A

R_DS(ON)< 79mΩ (V_GS= 10V)

R_DS(ON)< 94mΩ (V_GS= 4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

100

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

4.2

Continuous Drain

Current

I_D

3.4

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

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