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AP6P250K PDF预览

AP6P250K

更新时间: 2024-09-26 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 111K
描述
SOT-223

AP6P250K 数据手册

 浏览型号AP6P250K的Datasheet PDF文件第2页浏览型号AP6P250K的Datasheet PDF文件第3页浏览型号AP6P250K的Datasheet PDF文件第4页浏览型号AP6P250K的Datasheet PDF文件第5页浏览型号AP6P250K的Datasheet PDF文件第6页 
AP6P250K  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-60V  
250mΩ  
-2.4A  
D
Lower Gate Charge  
S
Fast Switching Characteristic  
RoHS Compliant & Halogen-Free  
D
SOT-223  
G
D
S
Description  
AP6P250 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide range  
of power applications.  
G
The SOT-223 package is designed for suface mount application,  
larger heatsink than SO-8 and SOT package.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
VDS  
VGS  
Drain-Source Voltage  
-60  
V
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
- 2.4  
A
- 2  
A
-10  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.78  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201612011