Datasheet > ASDM85R028NT

ASDM85R028NT

更新时间： 2024-11-02 17:15:27

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	1739K
描述
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数据手册

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ASDM85R028NT 数据手册

ASDM85R028NT

85V N-Channel MOSFET

Product Summary

Features

Advanced trench cell design

Low Thermal Resistance

•

VDS

2.4

260

•

RDS(on),Typ@VGS=10V

mΩ

Application

Motor drives

Power Tool

BMS

•

DC-DC converters and Off-line

UPS

•

TOLL

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

260

130

Tc = 25℃

Continuous Drain Cure

I_D

Tc = 100℃

I_DM

I_AS

722

41.5

Peak Drain Current, Pulsed

Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

430

℃

P_tot

227

T = 25℃

T_J, T_stg

-55~150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

0.41

Unit

Thermal Resistance from Junction to Case

℃/W

Thermal Resistance from Junction to Ambient

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_D= 41.5A.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

www.ascendsemi.com

0755-86970486

DEC 2021 Version1.0

1/8

12 3 4 5 6 7 8

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