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ASDM85R028NT PDF预览

ASDM85R028NT

更新时间: 2024-11-21 17:15:27
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
8页 1739K
描述
TOLL

ASDM85R028NT 数据手册

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ASDM85R028NT  
85V N-Channel MOSFET  
Product Summary  
Features  
Advanced trench cell design  
Low Thermal Resistance  
VDS  
85  
2.4  
260  
V
RDS(on),Typ@VGS=10V  
ID  
m  
Application  
A
Motor drives  
Power Tool  
BMS  
DC-DC converters and Off-line  
UPS  
TOLL  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
VDS  
Value  
85  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
260  
130  
Tc = 25  
Continuous Drain Cure  
ID  
A
Tc = 100℃  
1)  
IDM  
IAS  
722  
41.5  
A
A
Peak Drain Current, Pulsed  
Avalanche Current  
Single Pulse Avalanche Energy 2)  
Power Dissipation  
EAS  
430  
mJ  
W
Ptot  
227  
T = 25  
c
TJ, Tstg  
-55~150  
Operating Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
0.41  
44  
Unit  
Thermal Resistance from Junction to Case  
/W  
/W  
3)  
Thermal Resistance from Junction to Ambient  
RθJA  
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.5 mH, Rg = 25 Ω, ID = 41.5A.  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
www.ascendsemi.com  
0755-86970486  
DEC 2021 Version1.0  
1/8  

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