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ASDM80R055NG PDF预览

ASDM80R055NG

更新时间: 2024-11-02 17:15:23
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
8页 1542K
描述
TO-263

ASDM80R055NG 数据手册

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ASDM80R055NG  
80V N-Channel MOSFET  
General Features  
100% EAS Guaranteed  
Green Device Available  
Product Summary  
VDS  
80  
4.3  
110  
V
m  
A
Super Low Gate Charge  
Excellent CdV/dt effect decline  
RDS(on),Typ  
@
VGS=10 V  
Advanced high cell density Trench  
I D  
technology  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
TO-263 top view  
Absolute Maximum Ratings at T =25(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
80  
±20  
V
V
Continuous Drain Current, VGS @ 10V1,6  
Continuous Drain Current, VGS @ 10V1,6  
Pulsed Drain Current2  
110  
A
ID@TC=25℃  
105  
A
ID@TC=100℃  
IDM  
440  
A
3
EAS  
Single Pulse Avalanche Energy  
157  
mJ  
A
IAS  
PD@TC=25℃  
TSTG  
Avalanche Current  
Total Power Dissipation4  
34  
56  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
Max.  
62  
Unit  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
---  
---  
/W  
/W  
RθJC  
2.2  
www.ascendsemi.com  
0755-86970486  
NOV 2021 Version1.0  
1/8  

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