Datasheet > ASDM80R055NP

ASDM80R055NP

更新时间： 2024-05-23 22:23:40

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	623K
描述
TO-220

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中文翻译

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数据手册

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ASDM80R055NP 数据手册

ASDM80R055NP

80V N-Channel MOSFET

Product Summary

General Features

● 100% EAS Guaranteed

V DS

5.4

110

mΩ

● Green Device Available

● Super Low Gate Charge

R DS(on),Typ@ VGS=10 V

I D

● Excellent CdV/dt effect decline

● Advanced high cell density Trench

technology

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

TO-220 top view

Absolute Maximum Ratings at T =25℃ (unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V^1,6

Pulsed Drain Current²

110

I_D@T_C=25℃

105

I_D@T_C=100℃

I_DM

270

EAS

Single Pulse Avalanche Energy³

300

I_AS

P_D@T_C=25℃

T_STG

Avalanche Current

Total Power Dissipation⁴

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

Unit

Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case¹

℃/W

R_θJC

---

0.84

Ascend Semicondutor Co.,Ltd

DEC 2018 Version2.0

1/8

12 3 4 5 6 7 8

中文翻译

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