Datasheet > ASDM65S260NKQ

ASDM65S260NKQ

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	684K
描述
TO-252

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中文翻译

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ASDM65S260NKQ 数据手册

ASDM65S260NKQ

650V N-Channel Super-Junction MOSFET

Product Summary

Features

§ Super-Junction MOSFET

§ Low ON Resistance

650

214

mΩ

R DS(on),TYP@ VGS=10 V

Improved dv/dt Capability

§ 100% Avalanche Tested

§ RoHS compliant

Applications

§ Switching Mode Power Supplies (SMPS)

§ PWM Motor Controls

LED Lighting

§ Adapter

Schematic diagram

TO-252-2L top view

(T = 25^oC, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Symbol

V_DSS

Unit

650

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed ⁽²⁾

Gate to Source Voltage

Single pulsed Avalanche Energy ⁽³⁾

(1)

I_D

9 ⁽¹⁾

(1)

I_DM

V_GS

± 30

270

E_AS

V/ns

MOSFET dv/dt Ruggedness(V_DS=0~400V)

Peak diode Recovery dv/dt ⁽⁴⁾

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

dv/dt

P_D

0.41

W/^oC

Operating Junction Temperature& Storage

Temperature

Maximum lead temperaturefor soldering

purpose

T_STG, T_J

T_L

-55 to + 150

260

^oC

Notes

1. Drain current is limited by maximum junction temperature.

2. Repetitive rating : pulse width limited by junction temperature.

3 . L = 60mH, I_AS= 3A, V_DD= 50V, R_G=25Ω, Starting at T_J= 25^oC

4. I_SD≤ I_D, di/dt = 100A/us, V_DD≤ 400V, Starting at T_J=25^oC

THERMAL CHARACTERISTICS

Value

Parameter

Symbol

Unit

^oC/W

2.4

Thermal resistance, Junction to case

R_thjc

R_thja

Thermal resistance, Junction to ambient

NOV 2018 Version1.0

1/7

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7

中文翻译

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