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ASDM65S260NKQ PDF预览

ASDM65S260NKQ

更新时间: 2024-11-02 17:15:51
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安森德 - ASDsemi /
页数 文件大小 规格书
7页 684K
描述
TO-252

ASDM65S260NKQ 数据手册

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ASDM65S260NKQ  
650V N-Channel Super-Junction MOSFET  
Product Summary  
Features  
§ Super-Junction MOSFET  
§ Low ON Resistance  
V
DS  
650  
214  
16  
V
m  
A
R DS(on),TYP@ VGS=10 V  
ID  
Improved dv/dt Capability  
§
§ 100% Avalanche Tested  
§ RoHS compliant  
Applications  
§ Switching Mode Power Supplies (SMPS)  
§ PWM Motor Controls  
LED Lighting  
§
§ Adapter  
Schematic diagram  
TO-252-2L top view  
(T = 25oC, unless otherwise noted)  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
C
Limit  
Symbol  
VDSS  
Unit  
650  
Drain to Source Voltage  
V
A
Continuous Drain Current (@TC=25oC)  
Continuous Drain Current (@TC=100oC)  
Drain current pulsed (2)  
Gate to Source Voltage  
Single pulsed Avalanche Energy (3)  
(1)  
16  
ID  
9 (1)  
A
A
(1)  
45  
IDM  
VGS  
± 30  
270  
40  
V
EAS  
mJ  
V/ns  
V/ns  
W
MOSFET dv/dt Ruggedness(VDS=0~400V)  
Peak diode Recovery dv/dt (4)  
Total power dissipation (@TC=25oC)  
Derating Factor above 25oC  
dv/dt  
dv/dt  
15  
52  
PD  
0.41  
W/oC  
Operating Junction Temperature& Storage  
Temperature  
Maximum lead temperaturefor soldering  
purpose  
TSTG, TJ  
TL  
-55 to + 150  
260  
oC  
oC  
Notes  
1. Drain current is limited by maximum junction temperature.  
2. Repetitive rating : pulse width limited by junction temperature.  
3 . L = 60mH, IAS = 3A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC  
4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ 400V, Starting at TJ =25oC  
THERMAL CHARACTERISTICS  
Value  
Parameter  
Symbol  
Unit  
oC/W  
oC/W  
2.4  
67  
Thermal resistance, Junction to case  
Rthjc  
Rthja  
Thermal resistance, Junction to ambient  
NOV 2018 Version1.0  
1/7  
Ascend Semicondutor Co.,Ltd