ASDM65S260NKQ
650V N-Channel Super-Junction MOSFET
Product Summary
Features
§ Super-Junction MOSFET
§ Low ON Resistance
V
DS
650
214
16
V
mΩ
A
R DS(on),TYP@ VGS=10 V
ID
Improved dv/dt Capability
§
§ 100% Avalanche Tested
§ RoHS compliant
Applications
§ Switching Mode Power Supplies (SMPS)
§ PWM Motor Controls
LED Lighting
§
§ Adapter
Schematic diagram
TO-252-2L top view
(T = 25oC, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
Parameter
C
Limit
Symbol
VDSS
Unit
650
Drain to Source Voltage
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed (2)
Gate to Source Voltage
Single pulsed Avalanche Energy (3)
(1)
16
ID
9 (1)
A
A
(1)
45
IDM
VGS
± 30
270
40
V
EAS
mJ
V/ns
V/ns
W
MOSFET dv/dt Ruggedness(VDS=0~400V)
Peak diode Recovery dv/dt (4)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
dv/dt
dv/dt
15
52
PD
0.41
W/oC
Operating Junction Temperature& Storage
Temperature
Maximum lead temperaturefor soldering
purpose
TSTG, TJ
TL
-55 to + 150
260
oC
oC
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3 . L = 60mH, IAS = 3A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC
4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ 400V, Starting at TJ =25oC
THERMAL CHARACTERISTICS
Value
Parameter
Symbol
Unit
oC/W
oC/W
2.4
67
Thermal resistance, Junction to case
Rthjc
Rthja
Thermal resistance, Junction to ambient
NOV 2018 Version1.0
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Ascend Semicondutor Co.,Ltd