Datasheet > ASDM65S850NKQ

ASDM65S850NKQ

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1522K
描述
TO-252

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ASDM65S850NKQ 数据手册

ASDM65S850NKQ

650V N-Channel Super-Junction MOSFET

Product Summary

Features

§ Super-Junction MOSFET

§ Low ON Resistance

650

850

mΩ

R DS(on),TYP@ VGS=10 V

Improved dv/dt Capability

§ 100% Avalanche Tested

§ RoHS compliant

Applications

§ Switching Mode Power Supplies (SMPS)

§ PWM Motor Controls

LED Lighting

§ Adapter

Schematic diagram

TO-252 top view

ABSOLUTE MAXIMUM RATINGS (T_C= 25^oC, unless otherwise noted)

Limit

Parameter

Drain to Source Voltage

Symbol

V_DSS

I_D

Unit

650

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

(1)

4.2 ⁽¹⁾

(2)

(1)

Drain current pulsed

I_DM

V_GS

± 30

67.5

Gate to Source Voltage

(3)

Single pulsed Avalanche Energy

E_AS

V/ns

MOSFET dv/dt Ruggedness(V_DS=0~400V)

Peak diode Recovery dv/dt ⁽⁴⁾

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

dv/dt

P_D

0.3

W/^oC

Operating Junction Temperature & Storage

Temperature

Maximum lead temperature for soldering purpose

T_STG, T_J

T_L

-55 to + 150

260

^oC

Notes

1. Drain current is limited by maximum junction temperature.

2. Repetitive rating : pulse width limited by junction temperature.

3 . L = 60mH, I_AS= 1.5A, V_DD= 50V, R_G=25Ω, Starting at T_J= 25^oC

4. I_SD≤ I_D, di/dt = 100A/us, V_DD≤ 400V, Starting at T_J=25^oC

THERMAL CHARACTERISTICS

Parameter

Symbol

Unit

Value

^oC/W

3.3

Thermal resistance, Junction to case (Maximum)

Thermal resistance, Junction to ambient(Maximum)

R_thjc

R_thja

www.ascendsemi.com

0755-86970486

NOV 2018 Version1.0

1/7

12 3 4 5 6 7

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