ASDM65S850NKQ
650V N-Channel Super-Junction MOSFET
Product Summary
Features
§ Super-Junction MOSFET
§ Low ON Resistance
V
DS
650
850
4
V
mΩ
A
R DS(on),TYP@ VGS=10 V
ID
Improved dv/dt Capability
§
§ 100% Avalanche Tested
§ RoHS compliant
Applications
§ Switching Mode Power Supplies (SMPS)
§ PWM Motor Controls
D
LED Lighting
§
§ Adapter
G
S
Schematic diagram
TO-252 top view
ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted)
Limit
Parameter
Drain to Source Voltage
Symbol
VDSS
ID
Unit
650
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
(1)
4
4.2 (1)
A
(2)
(1)
16
Drain current pulsed
IDM
VGS
A
± 30
67.5
40
Gate to Source Voltage
V
(3)
Single pulsed Avalanche Energy
EAS
mJ
V/ns
V/ns
W
MOSFET dv/dt Ruggedness(VDS=0~400V)
Peak diode Recovery dv/dt (4)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
dv/dt
dv/dt
15
38
PD
0.3
W/oC
Operating Junction Temperature & Storage
Temperature
Maximum lead temperature for soldering purpose
TSTG, TJ
TL
-55 to + 150
260
oC
oC
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3 . L = 60mH, IAS = 1.5A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC
4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ 400V, Starting at TJ =25oC
THERMAL CHARACTERISTICS
Parameter
Symbol
Unit
Value
oC/W
oC/W
3.3
67
Thermal resistance, Junction to case (Maximum)
Thermal resistance, Junction to ambient(Maximum)
Rthjc
Rthja
www.ascendsemi.com
0755-86970486
NOV 2018 Version1.0
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