Datasheet > ASDM80R016NT

ASDM80R016NT

更新时间： 2024-11-02 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
9页	1858K
描述
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ASDM80R016NT 数据手册

ASDM80R016NT

80V N-Channel MOSFET

Features

Uses advanced SGT technology

Extremely low on-resistance RDS(on)

Product Summary

Excellent gate charge x RDS(on) product(FOM)

VDS

1.2

360

mΩ

Applications

RDS(on),Typ@VGS=10V

Motor control and drives

Battery management

DC/DC converter

General purpose applications

TOLL

Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 100°C (Silicon limit)

Pulsed drain current

I_D

360

234

950

I_{D pulse}

E_AS

T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH,Rg=25Ω)

Gate-Source voltage

2704

±20

V_GS

Power dissipation

P_D

312

T_C= 25°C

℃

T_j, T_stg

Operating junction and storage temperature

-55~150

Thermal Resistance

Symbol

R_thJC

Value

0.4

Unit

Thermal resistance, junction – case. Max

Thermal resistance, junction – ambient. Max

℃/W

R_thJA

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0755-86970486

NOV 2021 Version1.0

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