Datasheet > ASDM80N80KQ

ASDM80N80KQ

更新时间： 2024-05-23 22:23:07

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
9页	737K
描述
TO-252

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中文翻译

获取价格

数据手册

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ASDM80N80KQ 数据手册

ASDM80N80KQ

80V N-Channel MOSFET

Features

Product Summary

● High ruggedness

● Low R_DS(ON)

V DS

mΩ

R DS(on),Typ@ VGS=10 V

I D

8.4

●

Low Gate Charge

● Improved dv/dt Capability

● 100% Avalanche Tested

Application

● Synchronous Rectification,

● Li Battery Protect Board,

Inverter

Schematic diagram

TO-252-2L top view

Absolute maximum ratings

Symbol

V_DSS

Parameter

Value

Unit

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

62*

320

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

± 20

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

240

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

138.9

1.1

P_D

W/^oC

^oC

T_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Thermal resistance, Junction to

Value

Unit

^oC/W

R_0JA

R_0JC

Ambient

Thermal resistance, Junction to case

2.2

NOV 2020 Version1.0

1/9

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7...9

中文翻译

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