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ASDM65S130NF PDF预览

ASDM65S130NF

更新时间: 2024-11-02 17:15:55
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
9页 757K
描述
TO-220F

ASDM65S130NF 数据手册

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ASDM65S130NF  
650V N-Channel Super-Junction MOSFET  
Features  
Product Summary  
Super-Junction  
MOSFET  
V
DS  
650  
95  
V
m  
A
Low ON Resistance  
Improved dv/dt Capability  
100% Avalanche Tested  
RoHS compliant  
RDS(on),Typ@VGS =10 V  
ID  
25  
Application  
Switching Mode Power Supplies  
PWM Motor Controls  
LED Lighting  
(SMPS)  
Adapter  
G
D
S
TO-220F  
ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted)  
Limit  
TO-220F  
650  
Parameter  
Symbol  
VDSS  
ID  
Unit  
Drain to Source Voltage  
V
A
Continuous Drain Current (@TC=25oC)  
Continuous Drain Current (@TC=100oC)  
Drain current pulsed (2)  
(1)  
25  
15.7 (1)  
100  
±30  
750  
40  
A
IDM  
VGS  
A
Gate to Source Voltage  
V
(3)  
Single pulsed Avalanche Energy  
EAS  
mJ  
V/ns  
V/ns  
W
MOSFET dv/dt Ruggedness(VDS=0~400V)  
Peak diode Recovery dv/dt (4)  
Total power dissipation (@TC=25oC)  
Derating Factor above 25oC  
dv/dt  
dv/dt  
15  
47  
PD  
0.38  
W/oC  
Operating Junction Temperature & Storage  
Temperature  
Maximum lead temperature for soldering purpose  
TSTG, TJ  
TL  
-55 to + 150  
260  
oC  
oC  
Notes  
1. Drain current is limited by maximum junction temperature.  
2. Repetitive rating : pulse width limited by junction temperature.  
3 . L = 60mH, IAS = 5A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC  
4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ 400V, Starting at TJ =25oC  
THERMAL CHARACTERISTICS  
Value  
Parameter  
Symbol  
Unit  
TO-220F  
oC/W  
oC/W  
2.65  
66  
Thermal resistance, Junction to case (Maximum)  
Thermal resistance, Junction to ambient(Maximum)  
Rthjc  
Rthja  
Oct 2021 Version1.0  
1/9  
Ascend Semicondutor Co.,Ltd