ASDM65S130NF
650V N-Channel Super-Junction MOSFET
Features
Product Summary
• Super-Junction
MOSFET
V
DS
650
95
V
mΩ
A
• Low ON Resistance
• Improved dv/dt Capability
• 100% Avalanche Tested
• RoHS compliant
RDS(on),Typ@VGS =10 V
ID
25
Application
• Switching Mode Power Supplies
• PWM Motor Controls
• LED Lighting
(SMPS)
• Adapter
G
D
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted)
Limit
TO-220F
650
Parameter
Symbol
VDSS
ID
Unit
Drain to Source Voltage
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed (2)
(1)
25
15.7 (1)
100
±30
750
40
A
IDM
VGS
A
Gate to Source Voltage
V
(3)
Single pulsed Avalanche Energy
EAS
mJ
V/ns
V/ns
W
MOSFET dv/dt Ruggedness(VDS=0~400V)
Peak diode Recovery dv/dt (4)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
dv/dt
dv/dt
15
47
PD
0.38
W/oC
Operating Junction Temperature & Storage
Temperature
Maximum lead temperature for soldering purpose
TSTG, TJ
TL
-55 to + 150
260
oC
oC
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3 . L = 60mH, IAS = 5A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC
4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ 400V, Starting at TJ =25oC
THERMAL CHARACTERISTICS
Value
Parameter
Symbol
Unit
TO-220F
oC/W
oC/W
2.65
66
Thermal resistance, Junction to case (Maximum)
Thermal resistance, Junction to ambient(Maximum)
Rthjc
Rthja
Oct 2021 Version1.0
1/9
Ascend Semicondutor Co.,Ltd