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ASDM65N18S PDF预览

ASDM65N18S

更新时间: 2024-05-23 22:23:16
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安森德 - ASDsemi /
页数 文件大小 规格书
9页 1527K
描述
SOP-8

ASDM65N18S 数据手册

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ASDM65N18S  
65V N-Channel MOSFET  
Features  
Low Input Capacitance  
Product Summary  
Low Miller Charge  
V DS  
V
m  
A
65  
Low Input/Output Leakage  
Pb-free lead plating; RoHS compliant  
R DS(on),Typ@ VGS=10 V  
I D  
8
18  
Application  
Motor / Body Load Control  
Top View  
SOP-8  
N-Channel  
Absolute Maximum Ratings (TA=25°C unless otherwise noted)  
aramete  
Value  
Unit  
V
Drain-Source Voltage  
VDS  
VGS  
65  
Gate-Source Voltage  
±20  
V
A
TA=25°C  
18  
Drain Current-Continuous  
TA=70°C  
Drain Current-Pulsed Note 1  
ID  
40  
65  
2.5  
A
IDM  
PD  
A
TA=25°C  
W
W
°C  
°C  
Maximum Power Dissipation  
TA=70°C  
2.0  
Storage Temperature Range  
TSTG  
TJ  
-55 to +150  
-55 to +150  
Operating Junction Temperature Range  
Thermal Resistance Ratings  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
85  
Unit  
°C/W  
°C/W  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Rθ  
Rθ  
Steady State  
-
-
-
-
JA  
t 10s  
45  
JA  
www.ascendsemi.com  
0755-86970486  
NOV 2018 Version2.0  
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