Datasheet > ASDM60R025NQ

ASDM60R025NQ

更新时间： 2024-05-23 22:23:32

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1498K
描述
PDFN5*6-8

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ASDM60R025NQ 数据手册

ASDM60R025NQ

60V N-Channel MOSFET

General Features

● Excellent gate charge x R_DS(on)product(FOM)

Product Summary

● Very low on-resistance R_DS(on)

V DS

mΩ

● 150 °C operating temperature

● Pb-free lead plating

R DS(on),Typ@ VGS=10 V

I D

2.6

116

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

DFN5*6-8

N-Channel

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

DrainCurrent-Continuous(Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

116

63.6

I_D

I_D(100℃)

I_DM

464

Maximum Power Dissipation

100

W/℃

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.8

E_AS

500

Operating Junction and Storage Temperature Range

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

R_θJA

1.4

℃/W

Thermal Resistance,Junction-to-Ambient

www.ascendsemi.com

0755-86970486

NOV 2022 Version2.0

1/7

12 3 4 5 6 7

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