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VS-GA100NA60UP PDF预览

VS-GA100NA60UP

更新时间： 2024-09-26 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 局域网双极性晶体管功率控制
页数 文件大小 规格书
9页 235K
描述
TRANS IGBT CHIP N-CH 600V 100A 4PIN SOT-227 - Bulk

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中文翻译

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VS-GA100NA60UP 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PUFM-X4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：100 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJESD-30 代码：R-PUFM-X4
元件数量：1端子数量：4
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：550 ns
标称接通时间 (ton)：137 nsBase Number Matches：1

VS-GA100NA60UP 数据手册

 浏览型号VS-GA100NA60UP的Datasheet PDF文件第2页浏览型号VS-GA100NA60UP的Datasheet PDF文件第3页浏览型号VS-GA100NA60UP的Datasheet PDF文件第4页浏览型号VS-GA100NA60UP的Datasheet PDF文件第5页浏览型号VS-GA100NA60UP的Datasheet PDF文件第6页浏览型号VS-GA100NA60UP的Datasheet PDF文件第7页 
VS-GA100NA60UP  
Vishay Semiconductors  
www.vishay.com  
Insulated Gate Bipolar Transistor  
(Warp 2 Speed IGBT), 100 A  
FEATURES  
• Ultrafast: Optimized for minimum saturation  
voltage and speed 0 to 40 kHz in hard  
switching, > 200 kHz in resonant mode  
• Very low conduction and switching losses  
• Fully isolated package (2500 VAC/RMS)  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
SOT-227  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial market  
BENEFITS  
• Designed for increased operating efficiency in power  
conversion: PFC, UPS, SMPS, welding, induction heating  
PRODUCT SUMMARY  
• Lower overall losses available at frequencies 20 kHz  
• Easy to assemble and parallel  
VCES  
600 V  
100 A  
1.8 V  
I
C DC  
• Direct mounting to heatsink  
V
CE(on) at 100 A, 25 °C  
• Lower EMI, requires less snubbing  
• Plug in compatible with other SOT-227 packages  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
100  
50  
UNITS  
Collector to emitter breakdown voltage  
VCES  
V
TC = 25 °C  
C = 100 °C  
Continuous collector current  
IC  
T
A
V
Pulsed collector current  
ICM  
ILM  
200  
Repetitive rating: VGE = 20 V; pulse width limited  
by maximum junction temperature (fig. 20)  
Clamped inductive load current  
200  
Gate to emitter voltage  
RMS isolation voltage  
VGE  
20  
2500  
250  
VISOL  
Any terminal to case, t = 1 minute  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
100  
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to + 150  
°C  
12  
(1.3)  
Ibf · in  
(N · m)  
Mounting torque  
6 to 32 or M3 screw  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TYP.  
-
MAX.  
0.50  
1.0  
-
UNITS  
Junction to case, IGBT  
RthJC  
°C/W  
Thermal resistance, junction to case, diode  
Case to sink, flat, greased surface  
Weight of module  
RthJC  
-
RthCS  
0.05  
30  
-
g
Revision: 01-Feb-12  
Document Number: 94543  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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