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VS-GB75TP120U PDF预览

VS-GB75TP120U

更新时间: 2024-10-31 01:24:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 97K
描述
10 μs short circuit capability

VS-GB75TP120U 数据手册

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VS-GB75TP120U  
Vishay Semiconductors  
www.vishay.com  
Molding Type Module IGBT,  
2 in 1 Package, 1200 V, 75 A  
FEATURES  
• High short circuit capability, self limiting to 6 x IC  
• 10 μs short circuit capability  
• VCE(on) with positive temperature coefficient  
• Rugged with ultrafast performance  
• Square RBSOA  
• Low inductance case  
• Fast and soft reverse recovery antiparallel FWD  
• Isolated copper baseplate using DCB (Direct Copper  
Bonding) technology  
INT-A-PAK  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
• Switching mode power supplies  
• Inductive heating  
PRODUCT SUMMARY  
VCES  
1200 V  
75 A  
I
C at TC = 80 °C  
V
CE(on) (typical)  
• UPS  
3.2 V  
at IC = 75 A, 25 °C  
• Electronic welders  
Speed  
8 kHz to 30 kHz  
INT-A-PAK  
Package  
DESCRIPTION  
Circuit  
Half bridge  
Vishay’s IGBT power module provides ultra low conduction  
loss as well as short circuit ruggedness. It is designed for  
applications such as general inverters and UPS.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
20  
UNITS  
Collector to emitter voltage  
Gate to emitter voltage  
VCES  
V
VGES  
TC = 25 °C  
105  
75  
Collector current  
IC  
TC = 80 °C  
tp = 1 ms  
(1)  
Pulsed collector current  
Diode continuous forward current  
Diode maximum forward current  
Maximum power dissipation  
Short circuit withstand time  
RMS isolation voltage  
ICM  
150  
75  
A
IF  
IFM  
PD  
150  
500  
10  
TJ = 150 °C  
W
μs  
V
tSC  
VISOL  
I2t  
TJ = 125 °C  
f = 50 Hz, t = 1 min  
VR = 0 V, t = 10 ms, TJ = 125 °C  
2500  
1170  
I2t-value, diode  
A2s  
Note  
(1)  
Repetitive rating: pulse width limited by maximum junction temperature.  
Revision: 10-Jun-15  
Document Number: 94822  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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