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VS-GP400TD60S PDF预览

VS-GP400TD60S

更新时间: 2024-02-21 06:50:15
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
9页 171K
描述
Insulated Gate Bipolar Transistor,

VS-GP400TD60S 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:5.67
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-GP400TD60S 数据手册

 浏览型号VS-GP400TD60S的Datasheet PDF文件第2页浏览型号VS-GP400TD60S的Datasheet PDF文件第3页浏览型号VS-GP400TD60S的Datasheet PDF文件第4页浏览型号VS-GP400TD60S的Datasheet PDF文件第5页浏览型号VS-GP400TD60S的Datasheet PDF文件第6页浏览型号VS-GP400TD60S的Datasheet PDF文件第7页 
VS-GP400TD60S  
Vishay Semiconductors  
www.vishay.com  
Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 400 A  
Proprietary Vishay IGBT Silicon “L Series”  
FEATURES  
• Trench PT IGBT technology  
• Low VCE(on)  
• Square RBSOA  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
Dual INT-A-PAK Low Profile  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VCES  
600 V  
400 A  
BENEFITS  
I
C DC at TC = 103 °C  
• Increased operating efficiency  
V
CE(on) (typical) at 400 A, 25 °C  
1.30 V  
• Performance optimized as output inverter stage for TIG  
welding machines  
Speed  
Package  
Circuit  
DC to 1 kHz  
DIAP low profile  
Half bridge  
• Direct mounting on heatsink  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
TC = 80 °C  
758  
(1)  
Continuous collector current  
IC  
525  
Pulsed collector current  
ICM  
ILM  
n/a  
A
Clamped inductive load current  
n/a  
TC = 25 °C  
219  
Diode continuous forward current  
Gate to emitter voltage  
IF  
T
C = 80 °C  
145  
VGE  
PD  
20  
V
TC = 25 °C  
C = 80 °C  
Any terminal to case (VRMS t = 1 s, TJ = 25 °C)  
1563  
875  
Maximum power dissipation (IGBT)  
RMS isolation voltage  
W
T
VISOL  
3500  
-40 to +150  
V
Operating junction and storage temperature range TJ, TSTG  
°C  
Note  
(1)  
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals  
Revision: 20-May-16  
Document Number: 95768  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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