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VS-GA100TS60SFPBF

更新时间： 2024-10-30 14:31:39
品牌 Logo 应用领域
威世 - VISHAY 栅
页数 文件大小 规格书
7页 1238K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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VS-GA100TS60SFPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.82
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-GA100TS60SFPBF 数据手册

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VS-GA100TS60SFPbF  
www.vishay.com  
Vishay Semiconductors  
“Half-Bridge” IGBT INT-A-PAK,  
(Standard Speed IGBT), 100 A  
FEATURES  
• Standard speed PT IGBT technology  
• Standard speed: DC to 1 kHz, optimized for  
hard switching speed  
• FRED Pt® antiparallel diodes with fast recovery  
• Very low conduction losses  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
INT-A-PAK  
BENEFITS  
PRODUCT SUMMARY  
• Optimized for high current inverter stages (AC TIG welding  
machines)  
VCES  
600 V  
220 A  
I
C DC  
CE(on) at 100 A, 25 °C  
Package  
• Direct mounting to heatsink  
• Very low junction to case thermal resistance  
• Low EMI  
V
1.11 V  
INT-A-PAK  
Half bridge  
Circuit  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 130 °C  
220  
Continuous collector current  
IC  
T
100  
A
Pulsed collector current  
Peak switching current  
Gate to emitter voltage  
RMS isolation voltage  
ICM  
ILM  
440  
440  
VGE  
VISOL  
20  
V
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
780  
Maximum power dissipation  
PD  
W
°C  
TC = 100 °C  
312  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +150  
-40 to +125  
TStg  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VGE = 0 V, IC = 1 mA  
VGE = 15 V, IC = 100 A  
C = 200 A  
GE = 15 V, IC = 100 A, TJ = 125 °C  
MIN.  
TYP.  
MAX.  
UNITS  
Collector to emitter breakdown voltage  
VBR(CES)  
600  
-
1.11  
1.39  
1.08  
-
-
-
-
-
3
-
-
-
-
-
1.28  
-
Collector to emitter voltage  
VCE(on)  
I
V
V
1.22  
6
Gate threshold voltage  
VGE(th)  
ICES  
VFM  
IGES  
IC = 0.25 mA  
VGE = 0 V, VCE = 600 V  
-
1
Collector to emitter leakage current  
mA  
VGE = 0 V, VCE = 600 V, TJ = 125 °C  
IC = 100 A, VGE = 0 V  
-
10  
1.44  
1.25  
-
1.96  
1.54  
250  
Diode forward voltage drop  
V
IC = 100 A, VGE = 0 V, TJ = 125 °C  
Gate to emitter leakage current  
VGE  
=
20 V  
nA  
Revision: 09-Apr-14  
Document Number: 94544  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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