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VS-GA400TD60S

更新时间： 2024-10-30 21:06:39
品牌 Logo 应用领域
威世 - VISHAY 局域网栅功率控制晶体管
页数 文件大小 规格书
8页 141K
描述
Insulated Gate Bipolar Transistor,

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VS-GA400TD60S 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：MODULE-7Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：12 weeks
风险等级：5.82其他特性：UL RECONGONZED
外壳连接：ISOLATED最大集电极电流 (IC)：750 A
集电极-发射极最大电压：600 V配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码：R-XUFM-X7元件数量：2
端子数量：7最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：1799 ns标称接通时间 (ton)：909 ns
Base Number Matches：1

VS-GA400TD60S 数据手册

 浏览型号VS-GA400TD60S的Datasheet PDF文件第2页浏览型号VS-GA400TD60S的Datasheet PDF文件第3页浏览型号VS-GA400TD60S的Datasheet PDF文件第4页浏览型号VS-GA400TD60S的Datasheet PDF文件第5页浏览型号VS-GA400TD60S的Datasheet PDF文件第6页浏览型号VS-GA400TD60S的Datasheet PDF文件第7页 
VS-GA400TD60S  
Vishay Semiconductors  
www.vishay.com  
Dual INT-A-PAK Low Profile “Half Bridge”  
(Standard Speed IGBT), 400 A  
FEATURES  
• Gen 4 IGBT technology  
• Standard: optimized for hard switching speed  
• Low VCE(on)  
• Square RBSOA  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
Dual INT-A-PAK Low Profile  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VCES  
600 V  
750 A  
BENEFITS  
I
C DC at TC = 25 °C  
• Increased operating efficiency  
V
CE(on) (typical) at 400 A, 25 °C  
Speed  
1.24 V  
• Performance optimized as output inverter stage for TIG  
welding machines  
DC to 1 kHz  
Dual INT-A-PAK low profile  
Half bridge  
Package  
• Direct mounting on heatsink  
Circuit configuration  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
750  
(1)  
Continuous collector current  
IC  
T
525  
Pulsed collector current  
ICM  
ILM  
1000  
1000  
219  
A
Clamped inductive load current  
TC = 25 °C  
C = 80 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
T
145  
VGE  
PD  
20  
V
TC = 25 °C  
TC = 80 °C  
1563  
875  
Maximum power dissipation (IGBT)  
W
Any terminal to case  
(VRMS t = 1 s, TJ = 25 °C)  
RMS isolation voltage  
VISOL  
3500  
V
Note  
(1)  
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals  
Revision: 11-Dec-17  
Document Number: 93363  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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