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VS-GB300NH120N PDF预览

VS-GB300NH120N

更新时间： 2024-10-30 21:18:47
品牌 Logo 应用领域
威世 - VISHAY 栅
页数 文件大小 规格书
7页 165K
描述
Insulated Gate Bipolar Transistor,

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VS-GB300NH120N 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-GB300NH120N 数据手册

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VS-GB300NH120N  
Vishay Semiconductors  
www.vishay.com  
Molding Type Module IGBT,  
Chopper in 1 Package, 1200 V and 300 A  
FEATURES  
• Low VCE(on) SPT + IGBT technology  
• 10 μs short circuit capability  
• VCE(on) with positive temperature coefficient  
• Low inductance case  
• Fast and soft reverse recovery antiparallel FWD  
• Isolated copper baseplate using DCB (Direct Copper  
Bonding) technology  
Double INT-A-PAK  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
• Inverter for motor drive  
PRODUCT SUMMARY  
VCES  
1200 V  
300 A  
• AC and DC servo drive amplifier  
• Uninterruptible power supply (UPS)  
IC at TC = 80 °C  
VCE(on) (typical)  
at IC = 300 A, 25 °C  
2.0 V  
DESCRIPTION  
Speed  
Package  
Circuit  
8 kHz to 30 kHz  
Double INT-A-PAK  
Vishay’s IGBT power module provides ultra low conduction  
loss as well as short circuit ruggedness. It is designed for  
applications such as general inverters and UPS.  
Chopper high side switch  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
20  
UNITS  
Collector to emitter voltage  
Gate to emitter voltage  
VCES  
V
VGES  
TC = 25 °C  
500  
300  
600  
300  
600  
1645  
10  
Collector current  
IC  
TC = 80 °C  
tp = 1 ms  
(1)  
Pulsed collector current  
ICM  
A
Diode continuous forward current  
Diode maximum forward current  
Maximum power dissipation  
Short circuit withstand time  
RMS isolation voltage  
IF  
IFM  
TC = 80 °C  
tp = 1 ms  
PD  
TJ = 150 °C  
TJ = 125 °C  
f = 50 Hz, t = 1 min  
W
μs  
V
tSC  
VISOL  
2500  
Note  
(1)  
Repetitive rating: pulse width limited by maximum junction temperature.  
Revision: 12-Jun-15  
Document Number: 94783  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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