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VS-GB50NA120UX PDF预览

VS-GB50NA120UX

更新时间: 2024-09-26 14:36:43
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
10页 1186K
描述
Insulated Gate Bipolar Transistor

VS-GB50NA120UX 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

VS-GB50NA120UX 数据手册

 浏览型号VS-GB50NA120UX的Datasheet PDF文件第2页浏览型号VS-GB50NA120UX的Datasheet PDF文件第3页浏览型号VS-GB50NA120UX的Datasheet PDF文件第4页浏览型号VS-GB50NA120UX的Datasheet PDF文件第5页浏览型号VS-GB50NA120UX的Datasheet PDF文件第6页浏览型号VS-GB50NA120UX的Datasheet PDF文件第7页 
VS-GB50NA120UX  
Vishay Semiconductors  
www.vishay.com  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
FEATURES  
• NPT Generation V IGBT technology  
• Square RBSOA  
• HEXFRED® clamping diode  
• Positive VCE(on) temperature coefficient  
• Fully isolated package  
SOT-227  
• Speed 8 kHz to 60 kHz  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VCES  
1200 V  
50 A at 92 °C  
3.22 V  
BENEFITS  
IC DC  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
VCE(on) typical at 50 A, 25 °C  
Package  
SOT-227  
• Easy to assemble and parallel  
Circuit  
High side switch  
• Direct mounting on heatsink  
• Plug-in compatible with other SOT-227 packages  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
84  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
57  
Pulsed collector current  
ICM  
ILM  
150  
150  
76  
A
Clamped inductive load current  
TC = 25 °C  
TC = 80 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
52  
VGE  
PD  
20  
V
W
V
TC = 25 °C  
431  
242  
278  
156  
2500  
Power dissipation, IGBT  
TC = 80 °C  
TC = 25 °C  
Power dissipation, diode  
RMS isolation voltage  
PD  
TC = 80 °C  
VISOL  
Any terminal to case, t = 1 min  
Revision: 30-Jul-13  
Document Number: 93101  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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