Datasheet > VS-GB75SA120UP

VS-GB75SA120UP

更新时间： 2024-10-30 21:21:27

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
7页	129K
描述
Insulated Gate Bipolar Transistor

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VS-GB75SA120UP 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.83
Base Number Matches：	1

VS-GB75SA120UP 数据手册

Not Available for New Designs, Use VS-GB90SA120U

VS-GB75SA120UP

Vishay Semiconductors

www.vishay.com

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

FEATURES

• NPT Generation V IGBT technology

• Square RBSOA

• Positive V_CE(on)temperature coefficient

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

SOT-227

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

BENEFITS

V_CES

1200 V

75 A at 95 °C

3.3 V

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

I_CDC

• Easy to assemble and parallel

V_CE(on)typical at 75 A, 25 °C

Package

• Direct mounting on heatsink

SOT-227

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

131

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

T_C= 80 °C

Continuous collector current

I_C

Pulsed collector current

Clamped inductive load current

Gate to emitter voltage

I_CM

I_LM

200

V_GE

T_C= 25 °C

_C= 80 °C

Any terminal to case, t = 1 min

658

369

2500

Power dissipation

Isolation voltage

P_D

V_ISOL

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage V_BR(CES)

V_GE= 0 V, I_C= 250 μA

1200

V_GE= 15 V, I_C= 75 A

3.3

3.6

3.8

3.9

Collector to emitter voltage

Gate threshold voltage

V_CE(on)

V_GE(th)

V_GE= 15 V, I_C= 75 A, T_J= 125 °C

V_CE= V_GE, I_C= 250 μA

Temperature coefficient of

threshold voltage

V_GE(th)/T_JV_CE= V_GE, I_C= 1 mA (25 °C to 125 °C)

- 12

mV/°C

V_GE= 0 V, V_CE= 1200 V

I_CES

250

μA

Collector to emitter leakage current

Gate to emitter leakage current

V_GE= 0 V, V_CE= 1200 V, T_J= 150 °C

I_GES

V_GE

20 V

200

Revision: 26-Jul-13

Document Number: 93124

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

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与VS-GB75SA120UP相关器件

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VS-GBPC2510W	VISHAY	获取价格	RECT BRIDGE 1-PH 1000V 25A GBPCW

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