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VS-GB50YF120N PDF预览

VS-GB50YF120N

更新时间: 2024-10-30 21:11:31
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
10页 232K
描述
Insulated Gate Bipolar Transistor,

VS-GB50YF120N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:20 weeks 1 day风险等级:5.73
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-GB50YF120N 数据手册

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VS-GB50YF120N  
Vishay Semiconductors  
www.vishay.com  
IGBT Fourpack Module, 50 A  
FEATURES  
• Square RBSOA  
• HEXFRED® low Qrr, low switching energy  
• Positive VCE(on) temperature coefficient  
• Copper baseplate  
• Low stray inductance design  
• Designed and qualified for industrial market  
• UL approved file E78996  
ECONO2 4PACK  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
BENEFITS  
VCES  
1200 V  
50 A  
• Benchmark efficiency for SMPS appreciation in particular  
HF welding  
I
C at TC = 66 °C  
VCE(on) (typical)  
Speed  
3.49 V  
• Rugged transient performance  
• Low EMI, requires less snubbing  
• Direct mounting to heatsink space saving  
• PCB solderable terminals  
8 kHz to 30 kHz  
ECONO2  
4 PACK  
Package  
Circuit  
• Low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
66  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
44  
Pulsed collector current  
ICM  
ILM  
150  
See fig. C.T.5  
A
Clamped inductive load current  
150  
TC = 25 °C  
TC = 80 °C  
40  
Diode continuous forward current  
IF  
25  
150  
Diode maximum forward current  
Gate to emitter voltage  
IFM  
VGE  
20  
V
TC = 25 °C  
330  
Maximum power dissipation (IGBT)  
PD  
W
TC = 80 °C  
180  
Maximum operating junction temperature  
Storage temperature range  
Isolation voltage  
TJ  
150  
°C  
V
TStg  
VISOL  
-40 to +125  
AC 2500 (min)  
Revision: 12-Jun-15  
Document Number: 93653  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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