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VS-GB70NA60UF PDF预览

VS-GB70NA60UF

更新时间: 2024-10-30 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 局域网瞄准线双极性晶体管功率控制
页数 文件大小 规格书
9页 175K
描述
GB75YF120N IGBT Fourpack Module, 75 A

VS-GB70NA60UF 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
其他特性:UL RECOGNIZED, LOW CONDUCTION LOSS外壳连接:ISOLATED
最大集电极电流 (IC):111 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):308 ns
标称接通时间 (ton):277 nsBase Number Matches:1

VS-GB70NA60UF 数据手册

 浏览型号VS-GB70NA60UF的Datasheet PDF文件第2页浏览型号VS-GB70NA60UF的Datasheet PDF文件第3页浏览型号VS-GB70NA60UF的Datasheet PDF文件第4页浏览型号VS-GB70NA60UF的Datasheet PDF文件第5页浏览型号VS-GB70NA60UF的Datasheet PDF文件第6页浏览型号VS-GB70NA60UF的Datasheet PDF文件第7页 
VS-GB70NA60UF  
Vishay Semiconductors  
www.vishay.com  
“High Side Chopper” IGBT SOT-227  
(Warp 2 Speed IGBT), 70 A  
FEATURES  
• NPT warp 2 speed IGBT technology with  
positive temperature coefficient  
• Square RBSOA  
• Low VCE(on)  
• FRED Pt® hyperfast rectifier  
• Fully isolated package  
SOT-227  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VCES  
600 V  
70 A at 88 °C  
2.23 V  
BENEFITS  
IC DC  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
VCE(on) typical at 70 A, 25 °C  
IF DC  
Speed  
70 A at 86 °C  
30 kHz to 150 kHz  
SOT-227  
• Easy to assemble and parallel  
• Direct mounting to heatsink  
Package  
Circuit  
• Plug-in compatible with other SOT-227 packages  
• Lower conduction losses and switching losses  
• Low EMI, requires less snubbing  
Chopper high side switch  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
111  
76  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
Pulsed collector current  
ICM  
ILM  
120  
120  
113  
75  
Clamped inductive load current  
A
TC = 25 °C  
TC = 80 °C  
Diode continuous forward current  
IF  
Peak diode forward current  
Gate to emitter voltage  
IFM  
200  
20  
VGE  
V
W
V
TC = 25 °C  
447  
250  
236  
132  
2500  
Power dissipation, IGBT  
PD  
TC = 80 °C  
TC = 25 °C  
Power dissipation, diode  
RMS isolation voltage  
PD  
TC = 80 °C  
VISOL  
Any terminal to case, t = 1 min  
Revision: 11-Jun-15  
Document Number: 93103  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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