VS-GB50TP120N
Vishay Semiconductors
www.vishay.com
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drives
PRODUCT SUMMARY
VCES
1200 V
50 A
• Switching mode power supplies
• Electronic welders
I
C at TC = 80 °C
VCE(on) (typical)
1.75 V
at IC = 50 A, 25 °C
DESCRIPTION
Speed
8 kHz to 30 kHz
INT-A-PAK
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Package
Circuit
Half bridge
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
20
UNITS
Collector to emitter voltage
Gate to emitter voltage
VCES
V
VGES
TC = 25 °C
C = 80 °C
100
50
Collector current
IC
T
(1)
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
ICM
tp = 1 ms
100
50
A
IF
IFM
PD
100
446
10
TJ = 150 °C
W
μs
V
tSC
VISOL
I2t
TJ = 125 °C
f = 50 Hz, t = 1 min
VR = 0 V, t = 10 ms, TJ = 125 °C
2500
420
I2t-value, diode
A2s
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX. UNITS
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 1.0 mA, TJ = 25 °C
VGE = 15 V, IC = 50 A, TJ = 25 °C
1200
-
-
-
1.75
2.0
6.2
-
2.15
Collector to emitter voltage
VCE(on)
V
V
GE = 15 V, IC = 50 A, TJ = 125 °C
-
Gate to emitter threshold voltage
Collector cut-off current
VGE(th)
ICES
VCE = VGE, IC = 2.0 mA, TJ = 25 °C
VCE = VCES, VGE = 0 V, TJ = 25 °C
VGE = VGES, VCE = 0 V, TJ = 25 °C
5.0
-
7.0
5.0
mA
nA
Gate to emitter leakage current
IGES
-
-
400
Revision: 10-Jun-15
Document Number: 94820
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000