Datasheet > VS-GB50TP120N

VS-GB50TP120N

更新时间： 2024-11-15 01:24:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	97K
描述
10 Î¼s short circuit capability

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中文翻译

获取价格

数据手册

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VS-GB50TP120N 数据手册

VS-GB50TP120N

Vishay Semiconductors

www.vishay.com

Molding Type Module IGBT,

2 in 1 Package, 1200 V, 50 A

FEATURES

• High short circuit capability, self limiting to 6 x I_C

• 10 μs short circuit capability

• V_CE(on)with positive temperature coefficient

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

Bonding) technology

INT-A-PAK

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• AC inverter drives

PRODUCT SUMMARY

V_CES

1200 V

50 A

• Switching mode power supplies

• Electronic welders

_Cat T_C= 80 °C

V_CE(on)(typical)

1.75 V

at I_C= 50 A, 25 °C

DESCRIPTION

Speed

8 kHz to 30 kHz

INT-A-PAK

Vishay’s IGBT power module provides ultra low conduction

loss as well as short circuit ruggedness. It is designed for

applications such as general inverters and UPS.

Package

Circuit

Half bridge

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

UNITS

Collector to emitter voltage

Gate to emitter voltage

V_CES

V_GES

T_C= 25 °C

_C= 80 °C

100

Collector current

I_C

(1)

Pulsed collector current

Diode continuous forward current

Diode maximum forward current

Maximum power dissipation

Short circuit withstand time

RMS isolation voltage

I_CM

t_p= 1 ms

100

I_F

I_FM

P_D

100

446

T_J= 150 °C

μs

t_SC

V_ISOL

I²t

T_J= 125 °C

f = 50 Hz, t = 1 min

V_R= 0 V, t = 10 ms, T_J= 125 °C

2500

420

I²t-value, diode

A²s

Note

(1)

Repetitive rating: pulse width limited by maximum junction temperature.

IGBT ELECTRICAL SPECIFICATIONS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Collector to emitter breakdown voltage

V_(BR)CES

V_GE= 0 V, I_C= 1.0 mA, T_J= 25 °C

V_GE= 15 V, I_C= 50 A, T_J= 25 °C

1200

1.75

2.0

6.2

2.15

Collector to emitter voltage

V_CE(on)

_GE= 15 V, I_C= 50 A, T_J= 125 °C

Gate to emitter threshold voltage

Collector cut-off current

V_GE(th)

I_CES

V_CE= V_GE, I_C= 2.0 mA, T_J= 25 °C

V_CE= V_CES, V_GE= 0 V, T_J= 25 °C

V_GE= V_GES, V_CE= 0 V, T_J= 25 °C

5.0

7.0

5.0

Gate to emitter leakage current

I_GES

400

Revision: 10-Jun-15

Document Number: 94820

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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