VS-GA200SA60S

更新时间： 2024-12-01 13:15:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
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数据手册

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VS-GA200SA60S 数据手册

GA200SA60UP

Vishay Semiconductors

www.vishay.com

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

FEATURES

• Ultrafast: Optimized for minimum saturation

voltage and speed up to 40 kHz in hard

switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolate package (2500 V_AC/RMS

)

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

SOT-227

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

• Lower overall losses available at frequencies = 20 kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

PRODUCT SUMMARY

V_CES

600 V

1.92 V

15 V

V_CE(on)(typical)

V_GE

I_C

• Lower EMI, requires less snubbing

100 A

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

UNITS

Collector to emitter breakdown voltage

V_CES

T_C= 25 °C

_C= 100 °C

200

Continuous collector current

Pulsed collector current

I_C

100

I_CM

400

V_CC= 80 % (V_CES), V_GE= 20 V,

L = 10 μH, R_G= 2.0 ,

See fig. 13a

Clamped inductive load current

I_LM

400

Gate to emitter voltage

V_GE

E_ARV

V_ISOL

Repetitive rating; pulse width limited

by maximum junction temperature

Reverse voltage avalanche energy

RMS isolation voltage

160

Any terminal to case, t = 1 minute

T_C= 25 °C

2500

500

Maximum power dissipation

P_D

_C= 100 °C

200

Operating junction and storage

temperature range

T_J, T_Stg

- 55 to + 150

1.3 (12)

°C

N  m

(lbf in)

Mounting torque

6-32 or M3 screw

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

°C/W

Junction to case

R_thJC

0.25

Case to sink, flat, greased surface

Weight of module

R_thCS

0.05

Revision: 26-Oct-11

Document Number: 94364

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-GA200SA60S相关器件

型号	品牌	获取价格	描述	数据表
VS-GA200SA60SP	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 342A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA200SA60U	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GA200SA60UP	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
VS-GA200TH60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES
VS-GA250SA60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA400TD60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GB05XP120KPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB05XP120KTPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB100NH120N	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
VS-GB100TP120N	VISHAY	获取价格	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

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