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VS-GB150TS60NPBF PDF预览

VS-GB150TS60NPBF

更新时间： 2024-09-26 20:09:03
品牌 Logo 应用领域
威世 - VISHAY 栅
页数 文件大小 规格书
9页 1182K
描述
Insulated Gate Bipolar Transistor,

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VS-GB150TS60NPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-GB150TS60NPBF 数据手册

 浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第2页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第3页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第4页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第5页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第6页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第7页 
VS-GB150TS60NPbF  
Vishay Semiconductors  
www.vishay.com  
INT-A-PAK "Half-Bridge"  
(Ultrafast Speed IGBT), 138 A  
FEATURES  
• Generation 5 Non Punch Through (NPT)  
technology  
• Ultrafast: Optimized for hard switching speed  
8 kHz to 60 kHz  
• Low VCE(on)  
• 10 μs short circuit capability  
• Square RBSOA  
• Positive VCE(on) temperature coefficient  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
INT-A-PAK  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VCES  
600 V  
138 A  
IC DC  
BENEFITS  
VCE(on) at 150 A, 25 °C  
Package  
2.64 V  
• Benchmark efficiency for UPS and welding application  
• Rugged transient performance  
• Direct mounting on heatsink  
INT-A-PAK  
Half bridge  
Circuit  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
138  
Continuous collector current  
IC  
TC = 80 °C  
93  
Pulsed collector current  
ICM  
ILM  
300  
A
Clamped inductive load current  
300  
TC = 25 °C  
TC = 80 °C  
178  
Diode continuous forward current  
Gate to emitter voltage  
IF  
121  
VGE  
PD  
20  
V
W
V
TC = 25 °C  
500  
Maximum power dissipation  
TC = 80 °C  
280  
Isolation voltage  
VISOL  
TJ  
Any terminal to case, t = 1 min  
2500  
-40 to +150  
-40 to +150  
Operating junction temperature range  
Storage temperature range  
°C  
TStg  
Revision: 09-Apr-14  
Document Number: 94502  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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