5秒后页面跳转
捷配首页

Datasheet > VS-GB150TS60NPBF
VS-GB150TS60NPBF PDF预览

VS-GB150TS60NPBF

更新时间： 2024-10-30 20:09:03
品牌 Logo 应用领域
威世 - VISHAY 栅
页数 文件大小 规格书
9页 1182K
描述
Insulated Gate Bipolar Transistor,

阅读下载

中文翻译

获取价格

VS-GB150TS60NPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-GB150TS60NPBF 数据手册

 浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第2页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第3页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第4页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第5页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第6页浏览型号VS-GB150TS60NPBF的Datasheet PDF文件第7页 
VS-GB150TS60NPbF  
Vishay Semiconductors  
www.vishay.com  
INT-A-PAK "Half-Bridge"  
(Ultrafast Speed IGBT), 138 A  
FEATURES  
• Generation 5 Non Punch Through (NPT)  
technology  
• Ultrafast: Optimized for hard switching speed  
8 kHz to 60 kHz  
• Low VCE(on)  
• 10 μs short circuit capability  
• Square RBSOA  
• Positive VCE(on) temperature coefficient  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
INT-A-PAK  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VCES  
600 V  
138 A  
IC DC  
BENEFITS  
VCE(on) at 150 A, 25 °C  
Package  
2.64 V  
• Benchmark efficiency for UPS and welding application  
• Rugged transient performance  
• Direct mounting on heatsink  
INT-A-PAK  
Half bridge  
Circuit  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
138  
Continuous collector current  
IC  
TC = 80 °C  
93  
Pulsed collector current  
ICM  
ILM  
300  
A
Clamped inductive load current  
300  
TC = 25 °C  
TC = 80 °C  
178  
Diode continuous forward current  
Gate to emitter voltage  
IF  
121  
VGE  
PD  
20  
V
W
V
TC = 25 °C  
500  
Maximum power dissipation  
TC = 80 °C  
280  
Isolation voltage  
VISOL  
TJ  
Any terminal to case, t = 1 min  
2500  
-40 to +150  
-40 to +150  
Operating junction temperature range  
Storage temperature range  
°C  
TStg  
Revision: 09-Apr-14  
Document Number: 94502  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

中文翻译

下载PDF

与VS-GB150TS60NPBF相关器件

型号 品牌 获取价格 描述 数据表
VS-GB15XP120KPBF VISHAY

获取价格

 		Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB15XP120KTPBF VISHAY

获取价格

 		Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB200NH120N VISHAY

获取价格

 		Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES
VS-GB200TH120N VISHAY

获取价格

 		Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES
VS-GB200TH120U VISHAY

获取价格

 		Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES
VS-GB200TS60NPBF VISHAY

获取价格

 		Insulated Gate Bipolar Transistor,
VS-GB300NH120N VISHAY

获取价格

 		Insulated Gate Bipolar Transistor,
VS-GB50NA120UX VISHAY

获取价格

 		Insulated Gate Bipolar Transistor
VS-GB50TP120N VISHAY

获取价格

 		10 μs short circuit capability
VS-GB50YF120N VISHAY

获取价格

 		Insulated Gate Bipolar Transistor,

与VS-GB150TS60NPBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证