是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PUFM-P13 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | 其他特性: | UL APPROVED, LOW CONDUCTION LOSS |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 1200 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-PUFM-P13 | 元件数量: | 6 |
端子数量: | 13 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 361 ns | 标称接通时间 (ton): | 113 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VS-GB200NH120N | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES | |
VS-GB200TH120N | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES | |
VS-GB200TH120U | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES | |
VS-GB200TS60NPBF | VISHAY |
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Insulated Gate Bipolar Transistor, | |
VS-GB300NH120N | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, | |
VS-GB50NA120UX | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor | |
VS-GB50TP120N | VISHAY |
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10 μs short circuit capability | |
VS-GB50YF120N | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, | |
VS-GB70NA60UF | VISHAY |
获取价格 |
GB75YF120N IGBT Fourpack Module, 75 A | |
VS-GB75SA120UP | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor |