Datasheet > VS-GB200NH120N

VS-GB200NH120N

更新时间： 2024-10-30 21:13:23

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
7页	167K
描述
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES

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VS-GB200NH120N 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.84
最大集电极电流 (IC)：	420 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散 (Abs)：	1562 W	子类别：	Insulated Gate BIP Transistors
端子面层：	Nickel (Ni)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

VS-GB200NH120N 数据手册

VS-GB200NH120N

Vishay Semiconductors

www.vishay.com

Molding Type Module IGBT,

Chopper in 1 Package, 1200 V and 200 A

FEATURES

• High short circuit capability, self limiting to 6 x I_C

• 10 μs short circuit capability

• V_CE(on)with positive temperature coefficient

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

Double INT-A-PAK

• Isolated copper baseplate using DCB (Direct Copper

Bonding) technology

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• AC inverter drives

PRODUCT SUMMARY

V_CES

1200 V

200 A

• Switching mode power supplies

• Electronic welders

_Cat T_C= 80 °C

V_CE(on)(typical)

1.8 V

at I_C= 200 A, 25 °C

DESCRIPTION

Speed

8 kHz to 30 kHz

Double INT-A-PAK

Package

Vishay’s IGBT power module provides ultra low conduction

loss as well as short circuit ruggedness. It is designed for

applications such as general inverters and UPS.

Circuit

Chopper high side switch

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

UNITS

Collector to emitter voltage

Gate to emitter voltage

V_CES

V_GES

T_C= 25 °C

420

200

400

200

400

1562

Collector current

I_C

T_C= 80 °C

(1)

Pulsed collector current

Diode continuous forward current

Diode maximum forward current

Maximum power dissipation

Short circuit withstand time

RMS isolation voltage

I_CM

t_p= 1 ms

I_F

I_FM

P_D

T_C= 80 °C

t_p= 1 ms

T_J= 150 °C

μs

t_SC

V_ISOL

I²t

T_J= 125 °C

f = 50 Hz, t = 1 min

V_R= 0 V, t = 10 ms, T_J= 125 °C

2500

6900

I²t-value, diode

A²s

Note

(1)

Repetitive rating: pulse width limited by maximum junction temperature.

Revision: 12-Jun-15

Document Number: 94759

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-GB200NH120N相关器件

型号	品牌	获取价格	描述	数据表
VS-GB200TH120N	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES
VS-GB200TH120U	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES
VS-GB200TS60NPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GB300NH120N	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GB50NA120UX	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-GB50TP120N	VISHAY	获取价格	10 Î¼s short circuit capability
VS-GB50YF120N	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GB70NA60UF	VISHAY	获取价格	GB75YF120N IGBT Fourpack Module, 75 A
VS-GB75SA120UP	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-GB75TP120U	VISHAY	获取价格	10 Î¼s short circuit capability

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