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VS-GB200TS60NPBF PDF预览

VS-GB200TS60NPBF

更新时间: 2024-10-30 20:05:23
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
9页 1195K
描述
Insulated Gate Bipolar Transistor,

VS-GB200TS60NPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-GB200TS60NPBF 数据手册

 浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第2页浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第3页浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第4页浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第5页浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第6页浏览型号VS-GB200TS60NPBF的Datasheet PDF文件第7页 
VS-GB200TS60NPbF  
Vishay Semiconductors  
www.vishay.com  
INT-A-PAK "Half-Bridge"  
(Ultrafast Speed IGBT), 209 A  
FEATURES  
• Generation 5 Non Punch Through (NPT)  
technology  
• Ultrafast: Optimized for hard switching speed  
8 kHz to 60 kHz  
• Low VCE(on)  
• 10 μs short circuit capability  
• Square RBSOA  
• Positive VCE(on) temperature coefficient  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
• Industry standard package  
• Al2O3 DBC  
INT-A-PAK  
• UL approved file E78996  
• Designed for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VCES  
600 V  
IC DC  
209 A  
2.6 V  
BENEFITS  
VCE(on) at 200 A, 25 °C  
Package  
• Benchmark efficiency for UPS and welding application  
• Rugged transient performance  
• Direct mounting on heatsink  
INT-A-PAK  
Circuit  
Half Bridge with SMD Gate Resistor  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
209  
Continuous collector current  
IC  
TC = 80 °C  
142  
Pulsed collector current  
ICM  
ILM  
400  
A
Clamped inductive load current  
400  
TC = 25 °C  
TC = 80 °C  
178  
Diode continuous forward current  
Gate to emitter voltage  
IF  
121  
VGE  
PD  
20  
V
TC = 25 °C  
781  
Maximum power dissipation  
W
TC = 80 °C  
438  
Isolation voltage  
VISOL  
TJ  
Any terminal to case, t = 1 min  
2500  
-40 to +150  
V
Operating junction temperature range  
°C  
Revision: 09-Apr-14  
Document Number: 94503  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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