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VS-GA250SA60S

更新时间： 2024-09-26 21:18:15
品牌 Logo 应用领域
威世 - VISHAY 局域网栅功率控制晶体管
页数 文件大小 规格书
9页 290K
描述
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4

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VS-GA250SA60S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：20 weeks 1 day风险等级：5.71
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：400 A集电极-发射极最大电压：600 V
配置：SINGLEJESD-30 代码：R-PUFM-X4
元件数量：1端子数量：4
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL表面贴装：NO
端子面层：Nickel (Ni)端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：1050 ns标称接通时间 (ton)：325 ns
Base Number Matches：1

VS-GA250SA60S 数据手册

 浏览型号VS-GA250SA60S的Datasheet PDF文件第2页浏览型号VS-GA250SA60S的Datasheet PDF文件第3页浏览型号VS-GA250SA60S的Datasheet PDF文件第4页浏览型号VS-GA250SA60S的Datasheet PDF文件第5页浏览型号VS-GA250SA60S的Datasheet PDF文件第6页浏览型号VS-GA250SA60S的Datasheet PDF文件第7页 
VS-GA250SA60S  
Vishay Semiconductors  
www.vishay.com  
Insulated Gate Bipolar Transistor  
Ultralow VCE(on), 250 A  
FEATURES  
• Standard: optimized for minimum saturation  
voltage and low speed  
• Lowest conduction losses available  
• Fully isolated package (2500 VAC  
)
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
SOT-227  
• Designed and qualified for industrial level  
• UL approved file E78996  
PRODUCT SUMMARY  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VCES  
600 V  
1.33 V  
V
CE(on) (typical) at 200 A, 25 °C  
BENEFITS  
I
C at TC = 90 °C (1)  
Speed  
250 A  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, TIG welding, induction heating  
DC to 1 kHz  
SOT-227  
Package  
• Easy to assemble and parallel  
Circuit  
Single switch no diode  
• Direct mounting to heatsink  
Note  
• Plug-in compatible with other SOT-227 packages  
(1)  
Maximum collector current admitted 100 A to do not exceed the  
maximum temperature of terminals  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 90 °C  
400  
(1)  
Continuous collector current  
Pulsed collector current  
IC  
T
250  
A
Repetitive rating; VGE = 20 V, pulse width limited by  
maximum junction temperature  
ICM  
400  
Clamped Inductive load current  
Gate to emitter voltage  
ILM  
VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0  
400  
20  
VGE  
V
W
V
TC = 25 °C  
961  
462  
2500  
Power dissipation  
Isolation voltage  
PD  
TC = 90 °C  
VISOL  
Any terminal to case, t = 1 min  
Note  
(1)  
Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
150  
0.13  
-
UNITS  
Junction and storage temperature range TJ, TStg  
-40  
-
-
°C  
Thermal resistance junction to case  
Thermal resistance case to heatsink  
Weight  
RthJC  
RthCS  
-
-
-
-
-
°C/W  
Flat, greased surface  
0.05  
30  
-
-
g
Torque to terminal  
Torque to heatsink  
1.1 (9.7) Nm (lbf.in)  
1.3 (11.5) Nm (lbf.in)  
Mounting torque  
Case style  
-
SOT-227  
Revision: 20-May-16  
Document Number: 94704  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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VS-GA250SA60S 替代型号

型号 品牌 替代类型 描述 数据表
VS-GA200SA60SP VISHAY

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