5秒后页面跳转
VS-GB05XP120KPBF PDF预览

VS-GB05XP120KPBF

更新时间: 2024-12-02 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 局域网瞄准线功率控制晶体管
页数 文件大小 规格书
10页 186K
描述
Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MTP, MODULE-13

VS-GB05XP120KPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PUFM-P13
Reach Compliance Code:compliant风险等级:5.68
其他特性:UL APPROVED, LOW CONDUCTION LOSS外壳连接:ISOLATED
最大集电极电流 (IC):12 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-PUFM-P13
元件数量:6端子数量:13
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:PIN/PEG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):461 ns
标称接通时间 (ton):64 nsBase Number Matches:1

VS-GB05XP120KPBF 数据手册

 浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第2页浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第3页浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第4页浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第5页浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第6页浏览型号VS-GB05XP120KPBF的Datasheet PDF文件第7页 
VS-GB05XP120KTPbF  
www.vishay.com  
Vishay Semiconductors  
Three Phase Inverter Module in MTP Package  
1200 V NPT IGBT and HEXFRED® Diodes, 5 A  
FEATURES  
• Generation 5 NPT 1200 V IGBT technology  
• HEXFRED® diode with ultrasoft reverse  
recovery  
• Very low conduction and switching losses  
• Optional SMT thermistor (NTC)  
• Aluminum oxide DBC  
• Very low stray inductance design for high speed operation  
MTP  
• Short circuit 10 μs  
• Square RBSOA  
• Operating frequencies 8 kHz to 60 kHz  
• UL approved file E78996  
PRODUCT SUMMARY  
VCES  
• Designed and qualified for industrial level  
1200 V  
2.90 V  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VCE(on) typical at VGE = 15 V  
IC at TC = 100 °C  
tsc at TJ = 150 °C  
Package  
5 A  
BENEFITS  
> 10 μs  
• Optimized for inverter motor drive applications  
• Low EMI, requires less snubbing  
• Direct mounting to heatsink  
MTP  
Circuit  
Three phase inverter  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
12  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 100 °C  
TC = 100 °C  
5
Pulsed collector current  
Peak switching current  
ICM  
ILM  
24  
A
24  
Diode continuous forward current  
Peak diode forward current  
Gate to emitter voltage  
IF  
5
IFM  
12  
VGE  
VISOL  
20  
V
RMS isolation voltage  
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
76  
Maximum power dissipation  
(including diode and IGBT)  
PD  
W
T
C = 100 °C  
31  
Revision: 30-Oct-13  
Document Number: 93912  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-GB05XP120KPBF相关器件

型号 品牌 获取价格 描述 数据表
VS-GB05XP120KTPBF VISHAY

获取价格

Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB100NH120N VISHAY

获取价格

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
VS-GB100TP120N VISHAY

获取价格

Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A
VS-GB150TS60NPBF VISHAY

获取价格

Insulated Gate Bipolar Transistor,
VS-GB15XP120KPBF VISHAY

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB15XP120KTPBF VISHAY

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT
VS-GB200NH120N VISHAY

获取价格

Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES
VS-GB200TH120N VISHAY

获取价格

Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES
VS-GB200TH120U VISHAY

获取价格

Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES
VS-GB200TS60NPBF VISHAY

获取价格

Insulated Gate Bipolar Transistor,