是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PUFM-P13 |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
其他特性: | UL APPROVED, LOW CONDUCTION LOSS | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 1200 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-PUFM-P13 |
元件数量: | 6 | 端子数量: | 13 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 461 ns |
标称接通时间 (ton): | 64 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VS-GB05XP120KTPBF | VISHAY |
获取价格 |
Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT | |
VS-GB100NH120N | VISHAY |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
VS-GB100TP120N | VISHAY |
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Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A | |
VS-GB150TS60NPBF | VISHAY |
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Insulated Gate Bipolar Transistor, | |
VS-GB15XP120KPBF | VISHAY |
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Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT | |
VS-GB15XP120KTPBF | VISHAY |
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Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT | |
VS-GB200NH120N | VISHAY |
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Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES | |
VS-GB200TH120N | VISHAY |
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Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES | |
VS-GB200TH120U | VISHAY |
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Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES | |
VS-GB200TS60NPBF | VISHAY |
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Insulated Gate Bipolar Transistor, |