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VS-GA200SA60UP

更新时间： 2024-09-26 12:28:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
8页 153K
描述
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

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VS-GA200SA60UP 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT PACKAGE-4Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：6.88
其他特性：UL APPROVED, LOW CONDUCTION LOSS外壳连接：ISOLATED
最大集电极电流 (IC)：200 A集电极-发射极最大电压：600 V
配置：SINGLEJESD-30 代码：R-PUFM-X4
元件数量：1端子数量：4
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：620 ns
标称接通时间 (ton)：131 nsBase Number Matches：1

VS-GA200SA60UP 数据手册

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GA200SA60UP  
Vishay Semiconductors  
www.vishay.com  
Insulated Gate Bipolar Transistor  
(Ultrafast Speed IGBT), 100 A  
FEATURES  
• Ultrafast: Optimized for minimum saturation  
voltage and speed up to 40 kHz in hard  
switching, > 200 kHz in resonant mode  
• Very low conduction and switching losses  
• Fully isolate package (2500 VAC/RMS  
)
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
SOT-227  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
• Lower overall losses available at frequencies = 20 kHz  
• Easy to assemble and parallel  
• Direct mounting to heatsink  
PRODUCT SUMMARY  
VCES  
600 V  
1.92 V  
15 V  
VCE(on) (typical)  
VGE  
IC  
• Lower EMI, requires less snubbing  
100 A  
• Plug-in compatible with other SOT-227 packages  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter breakdown voltage  
VCES  
V
TC = 25 °C  
C = 100 °C  
200  
Continuous collector current  
Pulsed collector current  
IC  
T
100  
ICM  
400  
A
VCC = 80 % (VCES), VGE = 20 V,  
L = 10 μH, RG = 2.0 ,  
See fig. 13a  
Clamped inductive load current  
ILM  
400  
Gate to emitter voltage  
VGE  
EARV  
VISOL  
20  
V
mJ  
V
Repetitive rating; pulse width limited  
by maximum junction temperature  
Reverse voltage avalanche energy  
RMS isolation voltage  
160  
Any terminal to case, t = 1 minute  
TC = 25 °C  
2500  
500  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
200  
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to + 150  
1.3 (12)  
°C  
N m  
(lbf in)  
Mounting torque  
6-32 or M3 screw  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TYP.  
-
MAX.  
UNITS  
°C/W  
g
Junction to case  
RthJC  
0.25  
Case to sink, flat, greased surface  
Weight of module  
RthCS  
0.05  
30  
-
-
Revision: 26-Oct-11  
Document Number: 94364  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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