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VS-GA200TH60S PDF预览

VS-GA200TH60S

更新时间: 2024-12-01 21:18:27
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
7页 167K
描述
Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES

VS-GA200TH60S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):260 A集电极-发射极最大电压:600 V
门极-发射极最大电压:20 V元件数量:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散 (Abs):1042 W子类别:Insulated Gate BIP Transistors
端子面层:Nickel (Ni)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-GA200TH60S 数据手册

 浏览型号VS-GA200TH60S的Datasheet PDF文件第2页浏览型号VS-GA200TH60S的Datasheet PDF文件第3页浏览型号VS-GA200TH60S的Datasheet PDF文件第4页浏览型号VS-GA200TH60S的Datasheet PDF文件第5页浏览型号VS-GA200TH60S的Datasheet PDF文件第6页浏览型号VS-GA200TH60S的Datasheet PDF文件第7页 
VS-GA200TH60S  
Vishay Semiconductors  
www.vishay.com  
Molding Type Module IGBT,  
2-in-1 Package, 600 V and 200 A  
FEATURES  
• High short circuit capability  
• 10 μs short circuit capability  
• VCE(on) with positive temperature coefficient  
• Maximum junction temperature 150 °C  
• Latch-up free  
• Low inductance case  
Double INT-A-PAK  
• Fast and soft reverse recovery antiparallel FWD  
• Isolated copper baseplate using DCB (Direct Copper  
Bonding) technology  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
TYPICAL APPLICATIONS  
• UPS  
VCES  
600 V  
200 A  
IC at TC = 80 °C  
• Switching mode power supplies  
• Electronic welders  
VCE(on) (typical)  
at IC = 200 A, 25 °C  
1.9 V  
Speed  
Package  
Circuit  
DC to 1 kHz  
Double INT-A-PAK  
Half bridge  
DESCRIPTION  
Vishay’s IGBT power module provides ultra low conduction  
loss as well as short circuit ruggedness. It is designed for  
applications such as general UPS and SMPS.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
20  
UNITS  
Collector to emitter voltage  
Gate to emitter voltage  
VCES  
V
VGES  
TC = 25 °C  
260  
200  
400  
200  
400  
1042  
10  
Collector current  
IC  
TC = 80 °C  
(1)  
Pulsed collector current  
Diode continuous forward current  
Diode maximum forward current  
Maximum power dissipation  
Short circuit withstand time  
RMS isolation voltage  
ICM  
tp = 1 ms  
A
IF  
IFM  
PD  
TC = 80 °C  
tp = 1 ms  
TJ = 150 °C  
W
μs  
V
tSC  
VISOL  
I2t  
TC = 125 °C  
f = 50 Hz, t = 1 min  
VR= 0 V, t = 10 ms, TJ = 125 °C  
2500  
4900  
I2t-value, diode  
A2s  
Note  
(1)  
Repetitive rating: pulse width limited by maximum junction temperature.  
Revision: 10-Jun-15  
Document Number: 94762  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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