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VS-GA200HS60S1PBF PDF预览

VS-GA200HS60S1PBF

更新时间: 2024-12-01 15:57:47
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
7页 728K
描述
Insulated Gate Bipolar Transistor,

VS-GA200HS60S1PBF 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
Is Samacsys:NBase Number Matches:1

VS-GA200HS60S1PBF 数据手册

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VS-GA200HS60S1PbF  
www.vishay.com  
Vishay Semiconductors  
INT-A-PAK Half-Bridge IGBT  
(Standard Speed IGBT), 200 A  
FEATURES  
• Generation 4 IGBT technology  
• Standard: Optimized for hard switching speed  
DC to 1 kHz  
• Very low conduction losses  
• Industry standard package  
• UL approved file E78996  
• Designed and qualified for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
INT-A-PAK  
BENEFITS  
PRODUCT SUMMARY  
• Increased operating efficiency  
• Direct mounting to heatsink  
VCES  
600 V  
480 A  
I
C DC  
CE(on) at 200 A, 25 °C  
Package  
• Performance optimized as output inverter stage for TIG  
welding machines  
V
1.13 V  
INT-A-PAK  
Half-Bridge  
Circuit  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
480  
Continuous collector current  
IC  
TC = 116 °C  
200  
A
Pulsed collector current  
Peak switching current  
Gate to emitter voltage  
RMS isolation voltage  
ICM  
ILM  
800  
800  
VGE  
VISOL  
20  
V
Any terminal to case, t = 1 minute  
TC = 25 °C  
2500  
830  
Maximum power dissipation  
PD  
W
°C  
TC = 85 °C  
430  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +150  
-40 to +125  
TStg  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VGE = 0 V, IC = 1 mA  
VGE = 15 V, IC = 200 A  
GE = 15 V, IC = 200 A, TJ = 125 °C  
MIN.  
TYP.  
MAX.  
UNITS  
Collector to emitter breakdown voltage VBR(CES)  
600  
-
1.13  
1.08  
4.5  
0.025  
-
-
1.21  
1.18  
6
-
-
Collector to emitter voltage  
Gate threshold voltage  
VCE(on)  
VGE(th)  
ICES  
V
V
IC = 0.25 mA  
3
-
VGE = 0 V, VCE = 600 V  
1
Collector to emitter leakage current  
Gate to emitter leakage current  
mA  
nA  
V
GE = 0 V, VCE = 600 V, TJ = 125 °C  
-
10  
IGES  
VGE 20 V  
=
-
-
250  
Revision: 09-Apr-14  
Document Number: 94362  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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