Datasheet > VS-GA100TS60SF

VS-GA100TS60SF

更新时间： 2024-10-30 14:31:39

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
7页	1238K
描述
Insulated Gate Bipolar Transistor

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VS-GA100TS60SF 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.82
Base Number Matches：	1

VS-GA100TS60SF 数据手册

VS-GA100TS60SFPbF

www.vishay.com

Vishay Semiconductors

“Half-Bridge” IGBT INT-A-PAK,

(Standard Speed IGBT), 100 A

FEATURES

• Standard speed PT IGBT technology

• Standard speed: DC to 1 kHz, optimized for

hard switching speed

• FRED Pt^®antiparallel diodes with fast recovery

• Very low conduction losses

• Al₂O₃DBC

• UL approved file E78996

• Designed for industrial level

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

INT-A-PAK

BENEFITS

PRODUCT SUMMARY

• Optimized for high current inverter stages (AC TIG welding

machines)

V_CES

600 V

220 A

_CDC

_CE(on)at 100 A, 25 °C

Package

• Direct mounting to heatsink

• Very low junction to case thermal resistance

• Low EMI

1.11 V

INT-A-PAK

Half bridge

Circuit

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 130 °C

220

Continuous collector current

I_C

100

Pulsed collector current

Peak switching current

Gate to emitter voltage

RMS isolation voltage

I_CM

I_LM

440

V_GE

V_ISOL

Any terminal to case, t = 1 min

T_C= 25 °C

2500

780

Maximum power dissipation

P_D

°C

T_C= 100 °C

312

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-40 to +125

T_Stg

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

V_GE= 0 V, I_C= 1 mA

V_GE= 15 V, I_C= 100 A

_C= 200 A

_GE= 15 V, I_C= 100 A, T_J= 125 °C

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

V_BR(CES)

600

1.11

1.39

1.08

1.28

Collector to emitter voltage

V_CE(on)

1.22

Gate threshold voltage

V_GE(th)

I_CES

V_FM

I_GES

I_C= 0.25 mA

V_GE= 0 V, V_CE= 600 V

Collector to emitter leakage current

V_GE= 0 V, V_CE= 600 V, T_J= 125 °C

I_C= 100 A, V_GE= 0 V

1.44

1.25

1.96

1.54

250

Diode forward voltage drop

I_C= 100 A, V_GE= 0 V, T_J= 125 °C

Gate to emitter leakage current

V_GE

20 V

Revision: 09-Apr-14

Document Number: 94544

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-GA100TS60SF相关器件

型号	品牌	获取价格	描述	数据表
VS-GA100TS60SFPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-GA200HS60S1PBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GA200SA60S	VISHAY	获取价格	暂无描述
VS-GA200SA60SP	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 342A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA200SA60U	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GA200SA60UP	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
VS-GA200TH60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES
VS-GA250SA60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA400TD60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GB05XP120KPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MT

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