Datasheet > VS-GA100TS120UPBF

VS-GA100TS120UPBF

更新时间： 2024-12-01 19:54:39

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
10页	264K
描述
GA100TS60SFPbF "Half-Bridge" IGBT INT-A-PAK, (Standard Speed IGBT), 100 A

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VS-GA100TS120UPBF 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.83	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

VS-GA100TS120UPBF 数据手册

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VS-GA100TS120UPbF

www.vishay.com

Vishay Semiconductors

INT-A-PAK^™“Half-Bridge” (Ultrafast Speed IGBT), 100 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to

40 kHz in hard switching, > 200 kHz in resonant

mode

• Very low conduction and switching losses

• HEXFRED^®antiparallel diodes with ultrasoft recovery

• Industry standard package

• UL approved file E78996

INT-A-PAK

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

BENEFITS

PRODUCT SUMMARY

V_CES

1200 V

182 A

2.25 V

• Increased operating efficiency

• Direct mounting to heatsink

I_CDC

V_CE(on)at 100 A, 25 °C

• Performance optimized for power conversion: UPS,

SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

182

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

Continuous collector current

I_C

T_C= 93 °C

100

Repetitive rating; V_GE= 20 V, pulse width

limited by maximum junction temperature

Pulsed collector current

I_CM

I_LM

200

Peak switching current

See fig. 17

Peak diode forward current

Gate to emitter voltage

RMS isolation voltage

I_FM

V_GE

200

V_ISOL

Any terminal to case, t = 1 minute

T_C= 25 °C

2500

520

Maximum power dissipation

P_D

°C

_C= 85 °C

270

Operating junction temperature range

Storage temperature range

T_J

- 40 to + 150

- 40 to + 125

T_Stg

Revision: 26-Mar-12

Document Number: 94428

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与VS-GA100TS120UPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-GA100TS60SF	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-GA100TS60SFPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-GA200HS60S1PBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GA200SA60S	VISHAY	获取价格	暂无描述
VS-GA200SA60SP	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 342A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA200SA60U	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-GA200SA60UP	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
VS-GA200TH60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES
VS-GA250SA60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PAC
VS-GA400TD60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor,

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