Datasheet > STP42N60M2-EP

STP42N60M2-EP

更新时间： 2024-09-14 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	1272K
描述
N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET，TO-220封装

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中文翻译

获取价格

技术参数
数据手册

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STP42N60M2-EP 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	16 weeks	风险等级：	1.52
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP42N60M2-EP 数据手册

STB42N60M2-EP, STP42N60M2-EP,

STW42N60M2-EP

N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet - production data

Features

Order code

TAB

V_DS@ T_JmaxR_DS(on)max.

I_D

STB42N60M2-EP

STP42N60M2-EP

STW42N60M2-EP

650 V

0.087 Ω

34 A

D²PAK

TO-220

TAB



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

TO-247

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Tailored for very high frequency converters

(f > 150 kHz)

D(2, TAB)

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 EP enhanced

performance technology. Thanks to their strip

layout and improved vertical structure, the

G(1)

devices exhibit low on-resistance and optimized

switching characteristics with very low turn-off

switching losses, rendering them suitable for the

most demanding very high frequency converters.

S(3)

AM01476v1

Table 1: Device summary

Marking

Order code

Package

Packing

STB42N60M2-EP

STP42N60M2-EP

STW42N60M2-EP

D²PAK

TO-220

TO-247

Tape and reel

42N60M2EP

Tube

November 2017

DocID027327 Rev 2

1/20

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...20

中文翻译

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