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STP43N60DM2 PDF预览

STP43N60DM2

更新时间: 2024-11-24 14:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 410K
描述
N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET,TO-220封装

STP43N60DM2 数据手册

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STP43N60DM2  
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2  
Power MOSFET in a TO-220 package  
Datasheet - production data  
Features  
VDS  
TJmax.  
@
RDS(on)  
max.  
Order code  
ID  
PTOT  
STP43N60DM2  
650 V  
0.093 Ω  
34 A 250 W  
Fast-recovery body diode  
Extremely low gate charge and input  
capacitance  
Low on-resistance  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
Description  
This high voltage N-channel Power MOSFET is  
part of the MDmesh™ DM2 fast recovery diode  
series. It offers very low recovery charge (Qrr)  
and time (trr) combined with low RDS(on), rendering  
it suitable for the most demanding high efficiency  
converters and ideal for bridge topologies and  
ZVS phase-shift converters.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STP43N60DM2  
43N60DM2  
TO-220  
Tube  
July 2015  
DocID026790 Rev 5  
1/13  
www.st.com  
This is information on a product in full production.  

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